PROCEEDINGS VOLUME 0944
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS AND DEVICE APPLICATIONS | 14-18 MARCH 1988
Growth of Compound Semiconductor Structures II
IN THIS VOLUME

0 Sessions, 27 Papers, 0 Presentations
All Papers  (27)
ADVANCES IN SEMICONDUCTORS AND SUPERCONDUCTORS: PHYSICS AND DEVICE APPLICATIONS
14-18 March 1988
Newport Beach, CA, United States
All Papers
Proc. SPIE 0944, Heteroepitaxial Growth Of CdTe On GaAs (100) : RHEED and XPS Study Of The Te Precursor Surface, 0000 (15 August 1988); doi: 10.1117/12.947339
Proc. SPIE 0944, Selective LPE Growth Kinetics Of GaAs On MBE-Grown GaAs On Si, 0000 (15 August 1988); doi: 10.1117/12.947342
Proc. SPIE 0944, In-Situ RHEED Studies To Understand The Dislocation Formation Process In Growth Of InGaAs on GaAs, 0000 (15 August 1988); doi: 10.1117/12.947345
Proc. SPIE 0944, Computer Simulations Of The Role Of Surface Reconstruction, Stoichiometry And Strain In Molecular Beam Epitaxical Growth And Defect Formation, 0000 (15 August 1988); doi: 10.1117/12.947348
Proc. SPIE 0944, The Effect Of Surface Stoichiometry On The Initial Stages Of Heteroepitaxy Of II-VI Compounds Grown On (001)GaAs By Molecular Beam Epitaxy, 0000 (15 August 1988); doi: 10.1117/12.947350
Proc. SPIE 0944, A New Model For Excess Ga Interdiffusion Process In GaAs/CdTe Heteroepitaxies, 0000 (15 August 1988); doi: 10.1117/12.947352
Proc. SPIE 0944, Criteria For (111) Oriented Heteroepitaxial Growth Of Zinc Blende Crystals On (10U) Oriented Substrates, 0000 (15 August 1988); doi: 10.1117/12.947354
Proc. SPIE 0944, Molecular Mechanics And Monte Carlo Simulations, A Tool To Analyse Defects Formation In Heteroepitaxial Growth, 0000 (15 August 1988); doi: 10.1117/12.947357
Proc. SPIE 0944, TEM And HREM Characterization Of (Hg,Cd)Te/GaAs And CdTe/GaAs Interfaces, 0000 (15 August 1988); doi: 10.1117/12.947359
Proc. SPIE 0944, Photoluminescence And Electrical Properties Of MBE-Grown And Post-Annealed Zinc Selenide, 0000 (15 August 1988); doi: 10.1117/12.947361
Proc. SPIE 0944, The Influence Of Surface Structure On Diamond-Lattice Epitaxial Growth From The Vapor Phase, 0000 (15 August 1988); doi: 10.1117/12.947363
Proc. SPIE 0944, Electron Beam Source Molecular Beam Epitaxy Of AlxGa1-xAs Graded Band Gap Device Structures, 0000 (15 August 1988); doi: 10.1117/12.947365
Proc. SPIE 0944, Lateral Patterning Of Semiconductor Superlattice Heterostructures By Epitaxial Growth On Nonplanar Substrates, 0000 (15 August 1988); doi: 10.1117/12.947367
Proc. SPIE 0944, Effects Of Strains On The Polar/Non-Polar Heteroepitaxy, 0000 (15 August 1988); doi: 10.1117/12.947369
Proc. SPIE 0944, Long Wavelength Photoluminescence Of InAs1_xSbx (0<x<l) Grown By Molecular Beam Epitaxy On (100) InAs, 0000 (15 August 1988); doi: 10.1117/12.947370
Proc. SPIE 0944, Molecular Beam Epitaxial Growth Of InAsSb Superlattices For IR Applications, 0000 (15 August 1988); doi: 10.1117/12.947371
Proc. SPIE 0944, CdTe Epilayers On (111) GaAs Grown By Hot-Wall Epitaxy, 0000 (15 August 1988); doi: 10.1117/12.947372
Proc. SPIE 0944, Growth of ZnSe/GaAs Structures By Close Spaced Vapor Transport, 0000 (15 August 1988); doi: 10.1117/12.947373
Proc. SPIE 0944, Heteroepitaxiai Growth Of CdTe And CdHgTe By Close-Spaced Vapor Transport, 0000 (15 August 1988); doi: 10.1117/12.947374
Proc. SPIE 0944, Atomic Layer Epitaxy Of II-VI Compounds, 0000 (15 August 1988); doi: 10.1117/12.947375
Proc. SPIE 0944, Growth And Characteristics Of Organic-On-Inorganic Semiconductor Heterostructures, 0000 (15 August 1988); doi: 10.1117/12.947376
Proc. SPIE 0944, Growth Of Quantum Wire Superlattices And Tilted Superlattices By Molecular Beam Epitaxy, 0000 (15 August 1988); doi: 10.1117/12.947377
Proc. SPIE 0944, Status Of Fluoride-Semiconductor Heteroepitaxial Growth, 0000 (15 August 1988); doi: 10.1117/12.947378
Proc. SPIE 0944, Electron-Beam Exposure Heteroepitaxial Growth Of GaAs/CaF2/Si Structures, 0000 (15 August 1988); doi: 10.1117/12.947379
Proc. SPIE 0944, In-Situ Rapid Isothermal Processing Of II-A Fluorides On Compound Semiconductors, 0000 (15 August 1988); doi: 10.1117/12.947380
Proc. SPIE 0944, Effects Of Low-Energy Ion/Surface Interactions On Nucleation And Growth Kineticsiduring Film Growth From The Vapor Phase, 0000 (15 August 1988); doi: 10.1117/12.947381
Proc. SPIE 0944, Laser-Assisted Molecular Beam Epitaxical Growth Of GaAs On Si (100), 0000 (15 August 1988); doi: 10.1117/12.947382
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