Paper
22 November 1986 High-Magnetic Field Characterisation Of (Hg,Cd)Te Detectors
J Singleton, F Nasir, R J Nicholas
Author Affiliations +
Proceedings Volume 0659, Materials Technologies for Infrared Detectors; (1986) https://doi.org/10.1117/12.938545
Event: 1986 International Symposium/Innsbruck, 1986, Innsbruck, Austria
Abstract
A description is given of the use of the Shubnikov-de Haas effect, parallel-field magnetoresistance and cyclotron resonance to give a rather complete characterisation of (Hg,Cd)Te photodetectors. The Shubnikov-de Haas and parallel-field magnetoresistance enable one to distinguish the separate contributions to conductivity from surface layers and bulk which bedevil normal characterisation methods such as the Hall effect. In addition, the surface carrier densities can be very accurately measured, and the number of populated surface subbands deduced. Cyclotron resonance is used to make an accurate determination of the x-value of the bulk material, and to measure the effective masses of the surface electrons, thus indicating whether the surface composition differs from that in the bulk. It is shown that these measurements are not only useful in the characterisation of detectors and material, but are of fundamental interest in the study of the two-dimensional electron gas: the surface electrons exhibit many novel modes of behaviour, such as enhanced or reduced polaronic effects and skipping orbits, the latter of which have only been previously observed in metals.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J Singleton, F Nasir, and R J Nicholas "High-Magnetic Field Characterisation Of (Hg,Cd)Te Detectors", Proc. SPIE 0659, Materials Technologies for Infrared Detectors, (22 November 1986); https://doi.org/10.1117/12.938545
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Cited by 9 scholarly publications.
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KEYWORDS
Magnetism

Electrons

Chromium

Oxides

Infrared detectors

Semiconductors

Sensors

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