Ultrafast Photoconductor Radiation Detectors

C. L. Wang; M. D. Pocha; J. D. Morse; M. S. Singh; B. A. Davis

doi:10.1117/12.967503

1 January 1987 Ultrafast Photoconductor Radiation Detectors

C. L. Wang, M. D. Pocha, J. D. Morse, M. S. Singh, B. A. Davis

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967503
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

We are developing and investigating homogeneous, photoconductive semiconductors as very fast radiation detectors. We irradiated GaAs, Cr-doped GaAs, and Fe-doped InP crystals with 14-MeV neutrons to produce lattice defects that act as fast-recombination centers for electrons and holes. Using short-pulse lasers and 17-MeV linear-accelerator electrons and bremsstrahlung x rays and r rays, we have measured the temporal response and sensitivity of these photoconductors as functions of fluence ranging from 10¹² to 10¹⁶ neutrons/cm². The carrier lifetime and mobility decrease monotonically as the neutron fluence increases, resulting in faster detector response at the expense of sensitivity. A resolving time of less than 30 ps (FWHM) was measured for the above photoconductors irradiated with ~10¹⁵ neutrons/cm².

Citation Download Citation

C. L. Wang, M. D. Pocha, J. D. Morse, M. S. Singh, and B. A. Davis "Ultrafast Photoconductor Radiation Detectors", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967503

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