InP Gunn diodes and millimeter-wave applications

J. D. Crowley

doi:10.1117/12.194300

14 December 1994 InP Gunn diodes and millimeter-wave applications

J. D. Crowley

Proceedings Volume 10276, Millimeter and Microwave Engineering for Communications and Radar: A Critical Review; 1027606 (1994) https://doi.org/10.1117/12.194300
Event: Millimeter and Submillimeter Waves and Applications: International Conference, 1994, San Diego, CA, United States

Abstract

InP Gunn diodes provide low-cost, efficient, reliable solutions to power generation and amplification problems throughout the millimeter-wave range. InP has replaced GaAs as the material of choice for most millimeter wave Gunn diodes. It offers a significant efficiency advantage and has extended the frequency range of practical Gunn oscillators beyond 140 GHz. Device performance in applications ranging from 35 to 140 GHz will be described, including local oscillators, VCOs, power amplifiers, and power combiners. CW output powers exceed 500 mW at 35 GHz, 150 mW at 94 GHz and 50 mW at 140 GHz, while conversion efficiencies exceed 15%, 6%, and 2.5%, respectively.

Citation Download Citation

J. D. Crowley "InP Gunn diodes and millimeter-wave applications", Proc. SPIE 10276, Millimeter and Microwave Engineering for Communications and Radar: A Critical Review, 1027606 (14 December 1994); https://doi.org/10.1117/12.194300

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