CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 10532 > Article
Presentation
14 March 2018 Using chessboard phosphor structure and patterned sapphire substrate technique to enhance white LED packaging efficiency (Conference Presentation)
Shih-Wei Huang
Author Affiliations +
Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII; 105321Y (2018) https://doi.org/10.1117/12.2288290
Event: SPIE OPTO, 2018, San Francisco, California, United States
Abstract
Patterned sapphire substrate (PSS) technique has been widely used to improve the performance of the GaN-based LEDs, because it is helpful for both internal quantum efficiency and light extraction efficiency. In this study, patterned sapphire substrates with different pattern morphology are fabricated by wet etching. The light angular distribution of LED can be adjusted as the pattern morphology on sapphire surface of LED is changed. We perform the white LEDs packaging with the chessboard phosphor structures. The blue light emitted from GaN die chip can be converted into white light more efficiently, due to the chessboard phosphor structures. We can select specific light angular distribution of LED fitting the chessboard phosphor structure to obtain the optimal white light packaging efficiency. The highest packaging efficiency of the chessboard packaging is 70.87 % at color temperature of daylight 6500 K +/- 500 K. The increasing packaging efficiency is contributed by well geometric matching between the light angular distribution of LED and the the chessboard phosphor structure. Thus, our experiment almost achieves the limitation of the chessboard packaging efficiency in simulation: 74.30 %.
Conference Presentation
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Shih-Wei Huang "Using chessboard phosphor structure and patterned sapphire substrate technique to enhance white LED packaging efficiency (Conference Presentation)", Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321Y (14 March 2018); https://doi.org/10.1117/12.2288290
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Packaging
Light emitting diodes
Patterned sapphire substrate
Internal quantum efficiency
Gallium nitride
Quantum efficiency
Sapphire
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top