Cost modeling 22nm pitch patterning approaches

Ed Korczynski

doi:10.1117/12.2297454

20 March 2018 Cost modeling 22nm pitch patterning approaches

Ed Korczynski

Proceedings Volume 10589, Advanced Etch Technology for Nanopatterning VII; 105890R (2018) https://doi.org/10.1117/12.2297454
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

No single lithography technology can create <24nm pitch patterns in a single pass except for direct-write e-beam which is too slow and expensive for HVM. Various complex multi-patterning process flows can be compared by Cost Per Wafer Pass (CPWP), a term defined as the cost-of-ownership (CoO) with all yield losses set to zero in high volume manufacturing (HVM). CPWP modeling allows for the evaluation of alternate 1D and 2D patterning paths, including EUV LE2, EUV SADP, ArFi LE4, ArFi SAQP + EUV cut-mask, and ArFi SADP + DSA + ArFi block-mask. Similar CPWP for ArFi- and EUV-based flows favor the latter due to reduced yield losses and manufacturing times.

Citation Download Citation

Ed Korczynski "Cost modeling 22nm pitch patterning approaches", Proc. SPIE 10589, Advanced Etch Technology for Nanopatterning VII, 105890R (20 March 2018); https://doi.org/10.1117/12.2297454

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available