20 February 2018 High-brightness tapered laser diodes with photonic crystal structures
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Abstract
Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≈1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.
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Yi Li, Yi Li, Weichuan Du, Weichuan Du, Zhou Kun, Zhou Kun, Songxin Gao, Songxin Gao, Yi Ma, Yi Ma, Chun Tang, Chun Tang, } "High-brightness tapered laser diodes with photonic crystal structures", Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974Y (20 February 2018); doi: 10.1117/12.2315462; https://doi.org/10.1117/12.2315462
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