Trap Characteristics In Large Area CCD Image Sensors

F H Yang; M M Blouke; D L Heidtmann; B Corrie; L D Riley; H H Marsh

doi:10.1117/12.952521

23 May 1989 Trap Characteristics In Large Area CCD Image Sensors

F H Yang, M M Blouke, D L Heidtmann, B Corrie, L D Riley, H H Marsh

Proceedings Volume 1071, Optical Sensors and Electronic Photography; (1989) https://doi.org/10.1117/12.952521
Event: OE/LASE '89, 1989, Los Angeles, CA, United States

Abstract

Detailed measurements and characterization of trap behavior in large area CCDs have been performed. The effect of these defects is to cause a local decrease in the charge transfer efficiency in the affected pixel. Bias-temperature stressing of the device has lead to the conclusion that the source of the traps is in the dielectric. A model is proposed which can explain all the current data.

Citation Download Citation

F H Yang, M M Blouke, D L Heidtmann, B Corrie, L D Riley, and H H Marsh "Trap Characteristics In Large Area CCD Image Sensors", Proc. SPIE 1071, Optical Sensors and Electronic Photography, (23 May 1989); https://doi.org/10.1117/12.952521

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