Nonlinear optical properties and ultrafast carrier dynamics in two-dimensional PtSe2 materials

Lei Wang; Saifeng Zhang; Niall McEvoy; Ningning Dong; Jun Wang

doi:10.1117/12.2526520

3 September 2019 Nonlinear optical properties and ultrafast carrier dynamics in two-dimensional PtSe₂ materials

Lei Wang, Saifeng Zhang, Niall McEvoy, Ningning Dong, Jun Wang

Proceedings Volume 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI; 1108918 (2019) https://doi.org/10.1117/12.2526520
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

The demand for an ultrabroad optical material with a bandgap tunable from zero to at least 1–2 eV has been one of the driving forces for exploring new 2D materials since the emergence of graphene, transition metal dichalcogenides, and black phosphorus. As an ultra-broadband 2D material with energy bandgap ranging from 0 to 1.2 eV, layered PtSe₂ shows much better air stability than its analogue, black phosphorous. In this work, high quality of centimeter scale PtSe₂ films with controllable thicknesses were prepared through thermally assisted conversion method. The linear and nonlinear optical performance and ultrafast dynamics of layered PtSe₂, and signatures of the transition from semiconductor to semimetal have been systematically studied experimentally and theoretically. Combining with rate equations, first-principles calculation, and electrical measurements, a comprehensive understanding about the evolution of nonlinear absorption and carrier dynamics with increasing layer thickness is provided, indicating its promising potential in nanophotonic devices such as infrared detectors, optical switches, and saturable absorbers.

Conference Presentation

Citation Download Citation

Lei Wang, Saifeng Zhang, Niall McEvoy, Ningning Dong, and Jun Wang "Nonlinear optical properties and ultrafast carrier dynamics in two-dimensional PtSe₂ materials", Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 1108918 (3 September 2019); https://doi.org/10.1117/12.2526520

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