Study of RLS trade-off mitigation utilizing a novel negative chemically amplified resist for high resolution patterning

Satoshi Enomoto; Kohei Machida; Michiya Naito; Takahiro Kozawa

doi:10.1117/12.2536909

26 September 2019 Study of RLS trade-off mitigation utilizing a novel negative chemically amplified resist for high resolution patterning

Satoshi Enomoto, Kohei Machida, Michiya Naito, Takahiro Kozawa

Author Affiliations +

Proceedings Volume 11147, International Conference on Extreme Ultraviolet Lithography 2019; 111471K (2019) https://doi.org/10.1117/12.2536909
Event: SPIE Photomask Technology + EUV Lithography, 2019, Monterey, California, United States

Abstract

The acid diffusion in chemically amplified resists (CARs) which are a current standard resist for semiconductor device manufacturing is a significant concern in the development of highly resolving resists. Thus, high resolution CARs are reduced the number of the acid catalytic reaction per acid by high amount of acid quencher to suppressed acid diffusion blur for remaining low line width roughness (LWR) number. Non-chemically amplified resists (non-CARs) are generally lower LWR than CARs. However, non-CARs are generally less sensitive to radiation than CARs due to lack of amplification mechanism. Recently, we proposed a negative-type resist utilizing non-CAR and CAR reactions on the same platform. This resist use radiation induced non-catalitic reactions which are polarity change of onium decomposition and radical crosslinking of radiation decomposed monomers. And also, the resist uses an acid catalytic etherification utilizing diphenyl methanol derivative and aliphatic alcohol. These combination reaction by non-CARs and CAR are expected to contribute the sensitivity improvement for high resolution resist. The synthesized resists were composed of triarylsulfonium cations as a polarity changer and radical generator, 2,2,2-trisubstituted acetophenone as a radical generator, triphenyl(4-vinylphenyl)stannane (TPSnSt) as an EUV absorption enhancer and a quencher, and 4- [(2,4-Dimethoxyphenyl)hydroxymethyl]phenylmethacrylate (ARMA) as a polymer-bound acid-reactive unit. As the result, a 25 nm HP pattern could be obtained with 2.1 nm LWR and at 160 μC/cm².

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Satoshi Enomoto, Kohei Machida, Michiya Naito, and Takahiro Kozawa "Study of RLS trade-off mitigation utilizing a novel negative chemically amplified resist for high resolution patterning", Proc. SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, 111471K (26 September 2019); https://doi.org/10.1117/12.2536909

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KEYWORDS

Chemically amplified resists

Polymers

Extreme ultraviolet lithography

Line width roughness

Optical lithography

Extreme ultraviolet

Stochastic processes

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