Prof. Takahiro Kozawa Profile

Prof. Takahiro Kozawa

Professor at SANKEN Osaka Univ

SPIE Involvement:

Conference Program Committee | Author

Publications (98)

Proceedings Article | 9 April 2024 Poster + Paper

Study on resist performance of inorganic-organic resist materials for EUV and EB lithography

Hiroki Yamamoto, Yuko Tsutsui Ito, Kazumasa Okamoto, Takahiro Kozawa

Proceedings Volume 12957, 129572F (2024) https://doi.org/10.1117/12.3025195

KEYWORDS: Extreme ultraviolet lithography, Lithography, Metals, Annealing, Extreme ultraviolet, Etching, Reactive ion etching, Particles, Miniaturization, Design

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Proceedings Article | 9 April 2024 Poster + Paper

Application of higher absorption materials to the underlayer of EUV lithography

Tadashi Omatsu, Sachiko Shinjo, Masatoshi Echigo, Yuki Ishimaru, Takahiro Kozawa

Proceedings Volume 12957, 1295723 (2024) https://doi.org/10.1117/12.3012067

KEYWORDS: Extreme ultraviolet lithography, Absorption, Extreme ultraviolet, Photons, Photoresist processing, Electrons, Iodine, Stochastic processes

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Proceedings Article | 9 April 2024 Presentation + Paper

Dissolution dynamics of copolymer of poly(4-hydroxystyrene-co-methacrylic acid) in tetraalkylammonium hydroxide aqueous solutions

Yutaro Iwashige, Yuko Tsutsui Ito, Takahiro Kozawa, Kazuo Sakamoto, Makoto Muramatsu

Proceedings Volume 12957, 129570D (2024) https://doi.org/10.1117/12.3011199

KEYWORDS: Copolymers, Stochastic processes, Lithography, Line width roughness, Semiconductors, Photoresist processing, Materials processing, Extreme ultraviolet lithography, Polymers

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Proceedings Article | 9 April 2024 Presentation + Paper

Substituent effects of acid generators on radiation-induced degradation and dissolution kinetics in chemically amplified resist process

Yoshika Tsuda, Yusa Muroya, Takahiro Kozawa, Takuya Ikeda, Yoshitaka Komuro

Proceedings Volume 12957, 1295708 (2024) https://doi.org/10.1117/12.3008970

KEYWORDS: Electrons, Absorbance, Sampling rates, Chemically amplified resists, Pulse generators, Stochastic processes, Quartz, Polymers, Photoresist processing, Photons

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Proceedings Article | 9 April 2024 Presentation + Paper

Feasibility study of a positive tone organometal chemically amplified resist for high-resolution EUV single patterning

Satoshi Enomoto, Kohei Machida, Shunya Honda, Takahiro Kozawa

Proceedings Volume 12957, 1295704 (2024) https://doi.org/10.1117/12.3010724

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Optical lithography, Photoacid generators, Chemically amplified resists, Metals, Ultraviolet radiation, Etching, Power consumption, Photoresist processing

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EUV lithography has been realize to use the mass production for 5nm logic device manufacture and beyond and semiconductor manufacturing plants that introduce EUV exposure system are being built or planned around the world. Therefore, the greatest interest of the EUV lithography is sub 10nm resolution patterning capability using high NA optics system. However, EUV chemically amplified resists (CARs) have had big problems about pattern defects due to stochastic effects from photon shot noise and acid diffusion blur less than 13nm HP. There is a trade-off relationship between resolution, line width roughness (LWR), and sensitivity (RLS trade-off). The RLS trade-off problems have come to a head with the progress of pattern miniaturization. The improvement of LWR and sensitivity without degrading the resolution is technically difficult because of acid diffusion and stochastic effect. Moreover, etching durability of CARs are also gradually surfaced as an issue due to reducing film thickness to prevent pattern collapse. The development of a novel platform for high resolution patterning becomes important. Currently, some of the new resist platform have been investigated and metal oxide resist and dry film resist were particularly achieved good patterning performance and etching durability as negative type resist by using metal component in the systems. On the contrary, performances of metal containing positive type resist by treating metal infiltration have not been sufficient to compare with the negative type resists. Sensitivity of non-CAR resists have a limitation by lack of the reaction probability because of only one reaction per photon at maximum. Therefore, including high concentration of EUV absorbing metal component, using chemically amplified reaction or other sensitivity enhancement techniques are necessary to meet the sensitivity requirement for high NA EUV resist. Previously, we proposed a positive tone organometal chemically amplified resist by making dissolution contrast though chain scission and polarity change to develop for butyl acetate. However, sensitivity and resolution were not sufficient as a photoresist for high NA EUV lithography. Although performance can be improved by modification of some structures, at first, we explored a way to significantly improve sensitivity by using PS-CAR process and new acid generator which can change the structure to UV sensitive one by EUV exposure only exposed area because of an aiming to reduce massive power consumption of EUV lithography.

Proceedings Article | 21 November 2023 Presentation + Paper

Analysis of dissolution modes of partially protected poly(4-hydroxystyrene) in tetraalkylammonium hydroxide aqueous solutions using decision trees and support vector machine

Hitomi Betsumiya, Yuqing Jin, Yuko Tsutsui Ito, Takahiro Kozawa, Kazuo Sakamoto, Makoto Muramatsu

Proceedings Volume 12750, 127500J (2023) https://doi.org/10.1117/12.2687340

KEYWORDS: Decision trees, Support vector machines, Polymers, Machine learning, Viscosity, Polymer thin films, Materials properties, Film thickness

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Proceedings Article | 21 November 2023 Poster + Paper

Automatic evaluation of line-and-space resist patterns with defects using image recognition technology

Yuqing Jin, Takahiro Kozawa, Kota Aoki, Tomoya Nakamura, Yasushi Makihara, Yasushi Yagi

Proceedings Volume 12750, 1275015 (2023) https://doi.org/10.1117/12.2685766

KEYWORDS: Hough transforms, Scanning electron microscopy, Pattern recognition, Monte Carlo methods, Photoresist processing, Image filtering, Image analysis, Extreme ultraviolet, Chemical analysis, Tunable filters

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Proceedings Article | 21 November 2023 Poster + Paper

Influence of surface free energy of underlayer on the dissolution of resist film in tetramethylammonium hydroxide (TMAH) aqueous solution

Jiahao Wang, Yukiko Sasaki, Takahiro Kozawa

Proceedings Volume 12750, 1275014 (2023) https://doi.org/10.1117/12.2688116

KEYWORDS: Photoresist materials, Photoresist developing, Polymers, Molecules, Extreme ultraviolet

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Proceedings Article | 1 May 2023 Presentation + Paper

Effects of photoacid generator decomposition on dissolution kinetics of poly(4-hydroxystyrene) in tetraalkylammonium hydroxide aqueous solutions

Yutaro Iwashige, Yuko Tsutsui Ito, Takahiro Kozawa, Kazuo Sakamoto, Makoto Muramatsu

Proceedings Volume 12498, 124980I (2023) https://doi.org/10.1117/12.2658138

KEYWORDS: Ultraviolet radiation, Photoacid generators, Stochastic processes, Line width roughness, Semiconductors, Photoresist processing, Materials processing, Lithography

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Proceedings Article | 1 May 2023 Poster + Paper

Chemical information extraction from scanning electron microscopy images on the basis of image recognition

Yuqing Jin, Takahiro Kozawa, Kota Aoki, Tomoya Nakamura, Yasushi Makihara, Yasushi Yagi

Proceedings Volume 12498, 1249825 (2023) https://doi.org/10.1117/12.2666992

KEYWORDS: Defect detection, Hough transforms, Scanning electron microscopy, Monte Carlo methods, Image filtering, Photoresist processing, Stochastic processes, Lithography, Extreme ultraviolet, Materials processing

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Proceedings Article | 1 May 2023 Poster + Paper

Reaction mechanisms and EB patterning evaluation of Sn-complex-side-chain polymer used for EUV lithography

Yui Takata, Yusa Muroya, Takahiro Kozawa, Satoshi Enomoto, Bilal Naqvi, Danilo De Simone

Proceedings Volume 12498, 1249826 (2023) https://doi.org/10.1117/12.2670173

KEYWORDS: Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Electron beam lithography, Design and modelling, Tin, Scanning electron microscopy, Internet of things, Electron beams

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Proceedings Article | 1 May 2023 Poster + Paper

Dependence of swelling and dissolution kinetics of poly(4-hydroxystyrene) in alkaline aqueous solution on alkyl chain length of tetraalkylammonium hydroxide

Hitomi Betsumiya, Yuko Tsutsui Ito, Takahiro Kozawa, Kazuo Sakamoto, Makoto Muramatsu

Proceedings Volume 12498, 1249829 (2023) https://doi.org/10.1117/12.2670175

KEYWORDS: Polymers, Photoresist processing, Extreme ultraviolet lithography, Miniaturization, Film thickness, Chemically amplified resists

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Proceedings Article | 1 May 2023 Poster + Paper

Design concept of a positive tone organometal chemically amplified resist to enhance the sensitivity and etching durability for high resolution EUV single patterning

Satoshi Enomoto, Kohei Machida, Michiya Naito, Takahiro Kozawa

Proceedings Volume 12498, 124981O (2023) https://doi.org/10.1117/12.2658130

KEYWORDS: Polymers, Chemically amplified resists, Extreme ultraviolet, Etching, Metals, Optical lithography, Solubility, Line width roughness, Electron beam lithography, Extreme ultraviolet lithography

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EUV chemically amplified resists (CARs) have had big problems about pattern defects due to stochastic effects from photon shot noise and acid diffusion blur less than 13 nm HP. There is a trade-off relationship between resolution, line width roughness (LWR), and sensitivity (RLS trade-off). Moreover, etching durability of CARs have also been gradually surfaced as an issue due to reducing film thickness to prevent pattern collapse. In the circumstances, some of the new resist platform have been investigated. Above all, metal oxide resist and dry resist were particularly achieved good patterning performance and etching durability as negative type resist by using metal component in the systems. However, EUV lithography mainly need positive tone resist for logic device patterning. From these viewpoints, we aimed to make an organometal positive tone EUV chemically amplified resist concept based on our negative type metal resist. Previously, we proposed a novel chemically amplified resist platform that consists of polarity changer, organotin compound and others. Polymers having triarylsulfonium cations, organotin compound and diarylmethanol as side chains were designed to realize a negative imaging property. Upon exposure to EUV or electron beam (EB), the ionic component is transferred to nonionic component through the decomposition of polymer-bounded onium cation (PBC). The polymer molecules are also crosslinked through the acid catalytic etherification. We demonstrated a high sensitivity and low LER property by using acetonitrile aqueous solution developer. This resist obtains a dissolution contrast to polar solvent by changing to hydrophobic structure though the decomposition of the onium cation and crosslinking. Presumably, this resist can convert from negative to positive tone by changing the part of reaction for making dissolution contrast from cross-link to chain scission and developer from polar solvent to nonpolar solvent for exposed material dissolution. After some modification of the resist material, we demonstrate positive tone imaging by using alkyl acetate as a developer.

Proceedings Article | 1 December 2022 Poster + Paper

Bayesian optimization-based estimation of effective reaction radius of chemically amplified resist in acid catalyzed deprotection reaction

Y. Jin, T. Kozawa

Proceedings Volume 12293, 122930P (2022) https://doi.org/10.1117/12.2641344

KEYWORDS: Scanning electron microscopy, Polymers, Chemically amplified resists, Computer simulations, Chemical analysis, Diffusion, Monte Carlo methods, Line edge roughness, Lithography, Electron beams

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Proceedings Article | 1 December 2022 Presentation + Paper

Effect of surface free energy of organic underlayer on dissolution kinetics of poly(4-hydroxystyrene) film in tetramethylammonium hydroxide aqueous developer

Yuqing Jin, Tomoe Otsuka, Naoki Tanaka, Takahiro Kozawa

Proceedings Volume 12292, 1229207 (2022) https://doi.org/10.1117/12.2642503

KEYWORDS: Natural surfaces, Standards development, Polymers, Stochastic processes, Chemically amplified resists, Photoresist processing, Interfaces, Testing and analysis, Molecules, Liquids

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Proceedings Article | 1 December 2022 Presentation + Paper

Study of RLS trade-off mitigation utilizing an organotin-containing chemically amplified resist for high sensitivity patterning

Satoshi Enomoto, Kohei Machida, Michiya Naito, Takahiro Kozawa

Proceedings Volume 12292, 122920D (2022) https://doi.org/10.1117/12.2641179

KEYWORDS: Polymers, Ultraviolet radiation, Optical lithography, Line edge roughness, Chemically amplified resists, Extreme ultraviolet lithography, Scanning electron microscopy, Extreme ultraviolet, Silver, Line width roughness

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Proceedings Article | 11 November 2022 Presentation

Defect risks in chemically amplified resists used for extreme ultraviolet lithography

Takahiro Kozawa

Proceedings Volume PC12292, PC1229205 (2022) https://doi.org/10.1117/12.2643012

KEYWORDS: Polymers, Molecules, Extreme ultraviolet lithography, Chemically amplified resists, Electrons, Stochastic processes, Lithography, Standards development, Semiconductors, Monte Carlo methods

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Proceedings Article | 25 May 2022 Presentation + Paper

Swelling and dissolution kinetics of poly(4-hydroxystyrene) in alkaline aqueous solution studied by quartz crystal microbalance (QCM) method

Yuko Tsutsui Ito, Hitomi Betsumiya, Takahiro Kozawa, Kazuo Sakamoto, Makoto Muramatsu

Proceedings Volume 12055, 1205509 (2022) https://doi.org/10.1117/12.2612781

KEYWORDS: Polymers, Quartz, Crystals, Standards development, Molecules, Chemically amplified resists, Image processing, Extreme ultraviolet lithography, Semiconductors, Photoresist processing

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Proceedings Article | 25 May 2022 Poster + Presentation + Paper

Prediction of line-and-space pattern after etching based on scanning electron microscope image of corresponding resist pattern using machine learning

Yuqing Jin, Takahiro Kozawa

Proceedings Volume 12055, 120550T (2022) https://doi.org/10.1117/12.2614161

KEYWORDS: Etching, Scanning electron microscopy, Silicon, Machine learning, Image classification, Lithography, Extreme ultraviolet, Electron microscopes, Photoresist processing, Electron beam lithography

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Proceedings Article | 25 May 2022 Presentation + Paper

State of polymer chains in alkaline developer studied by dynamic light scattering

Naoki Tanaka, Takahiro Kozawa, Takuya Ikeda, Yoshitaka Komuro, Daisuke Kawana

Proceedings Volume 12055, 120550J (2022) https://doi.org/10.1117/12.2614138

KEYWORDS: Polymer thin films, Dynamic light scattering

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Proceedings Article | 29 September 2021 Presentation

Stochastic effects in chemically amplified resists used for extreme ultraviolet lithography

Takahiro Kozawa

Proceedings Volume 11854, 118540Q (2021) https://doi.org/10.1117/12.2601798

KEYWORDS: Stochastic processes, Line edge roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Chemically amplified resists, Polymers, Molecules, Thermography, Photons, EUV optics

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Proceedings Article | 22 February 2021 Poster + Presentation + Paper

Analysis of dissolution kinetics of poly(4-hydroxystyrene) with different molecular weight distributions in alkaline aqueous solution using machine learning

Naoki Tanaka, Kyoko Watanabe, Kyoko Matsuoka, Kazuki Azumagawa, Takahiro Kozawa, Takuya Ikeda, Yoshitaka Komuro, Daisuke Kawana

Proceedings Volume 11612, 116120R (2021) https://doi.org/10.1117/12.2584067

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Proceedings Article | 22 February 2021 Poster + Presentation

Effect of resist film thickness on line-and-space resist patterns on chromium nitride in electron beam lithography

Akihiro Konda, Kazumasa Okamoto, Takahiro Kozawa, Takao Tamura

Proceedings Volume 11612, 116120Y (2021) https://doi.org/10.1117/12.2584016

KEYWORDS: Chromium, Electron beam lithography, Photomasks, Silicon, Semiconducting wafers, Line width roughness, Glasses, Electron beams, Quartz, Lithography

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Proceedings Article | 21 February 2021 Presentation + Paper

Regression analysis of photodecomposable quencher concentration effects on chemical gradient in chemically amplified extreme ultraviolet resist processes

Kazuki Azumagawa, Takahiro Kozawa

Proceedings Volume 11609, 116090X (2021) https://doi.org/10.1117/12.2583671

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Proceedings Article | 20 September 2020 Presentation

Study on dependence of transient swelling layer formation on molecular weight and dispersion of backbone polymer of chemically amplified EUV resists

Takahiro Kozawa, Kyoko Watanabe, Kyoko Matsuoka, Naoki Tanaka, Kazuki Azumagawa, Takuya Ikeda, Yoshitaka Komuro, Daisuke Kawana

Proceedings Volume 11517, 115170G (2020) https://doi.org/10.1117/12.2574877

KEYWORDS: Polymers, Stochastic processes, Dispersion, Extreme ultraviolet, Line edge roughness, Molecules, Photons, Bridges, Chemical reactions, Diffusion

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Proceedings Article | 20 September 2020 Presentation

Resist thickness dependence of line width roughness of chemically amplified resists used for electron beam lithography

Naoki Maeda, Akihiro Konda, Kazumasa Okamoto, Takahiro Kozawa, Takao Tamura

Proceedings Volume 11518, 115180D (2020) https://doi.org/10.1117/12.2574963

KEYWORDS: Line width roughness, Electron beam lithography, Chemically amplified resists, Photomasks, Electron beams, Scanning electron microscopy, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Electronic components

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Proceedings Article | 24 March 2020 Presentation

EUV sensitization mechanisms of carboxylic acids used as ligands of metal oxide nanocluster resists (Conference Presentation)

Takahiro Kozawa, Yusa Muroya

Proceedings Volume 11323, 113231B (2020) https://doi.org/10.1117/12.2554989

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Proceedings Article | 23 March 2020 Presentation + Paper

Mechanism of resist heating effect in chemically amplified resist

Y. Ikari, K. Okamoto, N. Maeda, A. Konda, T. Kozawa, T. Tamura

Proceedings Volume 11326, 113260G (2020) https://doi.org/10.1117/12.2551825

KEYWORDS: Polymers, Monte Carlo methods, Absorption, Chemically amplified resists, Photomasks, Temperature metrology, Ions, Lithography, Image processing, Semiconductors

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The photo-mask in lithographic process of semiconductor device has an important role to transfer the downsized target image to the wafer. Due to the development of information society, demand for semiconductor devices has been growing. In order to increase photo-mask manufacturing throughput, the current density of electron beam (EB) has been getting higher. EB exposure increases the resist temperature on mask substrate inhomogeneous depending on its current density, shot size, writing order and etc. It is known that the resist sensitivity increases with irradiated resist temperature (heating effect). So, inhomogeneous temperature increase of resist on mask substrate disturbs precise pattern formation. However, the physical or chemical mechanism of heating effect has been still unknown. Here, we examined temperature dependence of acid generation process in chemically amplified resists (CARs). Poly(4- hydroxystyrene) (PHS) and poly(4-[(tert-butoxycarbonyl)oxy]styrene-co-4-hydroxystyrene) (PTBSHS) were used as CAR resin. Monte Carlo simulation moving thermalized electron under the electric field between polymer radical cations were performed with changing the temperature. From the simulation, it was revealed that the energy increase of thermalized electron contributes to the acid yield by 0.038 %/K. Quantification of the acid yields in resist films upon exposed to EB were performed with changing the temperature by titration method using Coumarin 6 (C6) as an acid sensitive dye. The acid yield increased by 0.14 %/K in PHS film and 0.21 %/K in PTBSHS film, respectively. Both values were higher than the simulation value (0.038 %/K). Pulse radiolysis experiment was also performed to observe deprotonation of polymer radical cations at 298 and 343 K. The decay of dimer radical cation of PTBSHS became 1.6 times faster at 343 K than that at 298 K. From the results, it is suggested that the heating effect mainly caused by the temperature dependence of deprotonation rate from the radical cations of PTBSHS.

Proceedings Article | 23 March 2020 Paper

Analysis of trade-off relationships between resolution, line edge roughness, and sensitivity in extreme ultraviolet lithography using machine learning

Kazuki Azumagawa, Takahiro Kozawa

Proceedings Volume 11323, 1132329 (2020) https://doi.org/10.1117/12.2551826

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Machine learning, Extreme ultraviolet, Monte Carlo methods, Semiconductors, Information science, Lithography, Industrial chemicals, Photoresist processing

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Proceedings Article | 23 March 2020 Presentation + Paper

Sensitivity enhancement of chemically amplified EUV resist by adding diphenyl sulfone derivatives

Kazumasa Okamoto, Shunpei Kawai, Takahiro Kozawa

Proceedings Volume 11326, 113260D (2020) https://doi.org/10.1117/12.2551865

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Electron beam lithography, Polymers, Lithography, Line width roughness, FT-IR spectroscopy, Ionization

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Proceedings Article | 26 September 2019 Paper

Study of RLS trade-off mitigation utilizing a novel negative chemically amplified resist for high resolution patterning

Satoshi Enomoto, Kohei Machida, Michiya Naito, Takahiro Kozawa

Proceedings Volume 11147, 111471K (2019) https://doi.org/10.1117/12.2536909

KEYWORDS: Chemically amplified resists, Polymers, Optical lithography, Extreme ultraviolet lithography, Line width roughness, Extreme ultraviolet, Stochastic processes, Diffusion, Electron beam lithography, Light sources

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Proceedings Article | 26 September 2019 Paper

Strategy for the breakthrough of RLS trade-off relationship in the development of novel resist materials and a developer

Ayako Nakajima, Manabu Hoshino, Kazunori Taguchi, Takahiro Kozawa

Proceedings Volume 11148, 1114814 (2019) https://doi.org/10.1117/12.2536526

KEYWORDS: Fluorine, Chemical species, Scanning electron microscopy, Lithography, Optical lithography, Absorption, Carbon

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Proceedings Article | 28 June 2019 Paper

Analysis of line-and-space patterns of ZrO2 nanoparticle resist on the basis of EUV sensitization mechanism

Takahiro Kozawa, Teppei Yamada, Ayako Nakajima, Yusa Muroya, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10957, 109570C (2019) https://doi.org/10.1117/12.2515133

KEYWORDS: Nanoparticles, Line width roughness, Metals, Oxides, X-rays, Reflectivity, Extreme ultraviolet, Zirconium dioxide, Extreme ultraviolet lithography

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Proceedings Article | 31 May 2019 Paper

Fundamental study on dissolution kinetics of poly(4-hydroxystyrene) for development of high-resolution resists

Ayako Nakajima, Kyoko Watanabe, Kyoko Matsuoka, Takahiro Kozawa, Yoshitaka Komuro, Daisuke Kawana, Akiyoshi Yamazaki

Proceedings Volume 10957, 109571R (2019) https://doi.org/10.1117/12.2514938

KEYWORDS: Polymers, Molecules, Quartz, Crystals, Polymer thin films, Extreme ultraviolet lithography, Diffusion, Complex systems, Chemically amplified resists, Lithography

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Proceedings Article | 25 March 2019 Paper

Improvement of dual insolubilization resist performance through the incorporation of various functional units

Satoshi Enomoto, Takumi Yoshino, Kohei Machida, Takahiro Kozawa

Proceedings Volume 10960, 109600D (2019) https://doi.org/10.1117/12.2515149

KEYWORDS: Polymers, Extreme ultraviolet lithography, Absorption, Extreme ultraviolet, Semiconducting wafers, Diffusion, Line width roughness, Chemically amplified resists, Stochastic processes, Head-mounted displays

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SPIE Journal Paper | 12 December 2018

Sensitizers in extreme ultraviolet chemically amplified resists: mechanism of sensitivity improvement

Yannick Vesters, Jing Jiang, Hiroki Yamamoto, Danilo De Simone, Takahiro Kozawa, Stefan De Gendt, Geert Vandenberghe

JM3, Vol. 17, Issue 04, 043506, (December 2018) https://doi.org/10.1117/12.10.1117/1.JMM.17.4.043506

KEYWORDS: Absorption, Photoresist materials, Photons, Extreme ultraviolet, Electrons, Optical lithography, Chemically amplified resists, Extreme ultraviolet lithography, Photoresist developing, Metals

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Proceedings Article | 12 October 2018 Presentation

Pattern formation mechanism of zirconia nanoparticle resist used for extreme-ultraviolet lithography (Conference Presentation)

Takahiro Kozawa, Teppei Yamada, Satoshi Ishihara, Hiroki Yamamoto, Yusa Muroya, Julius J. Santillan, Toshiro Itani

Proceedings Volume 10809, 108090I (2018) https://doi.org/10.1117/12.2501647

KEYWORDS: Nanoparticles, Zirconium dioxide, Extreme ultraviolet lithography, Metals, Oxides, Chemically amplified resists, Line edge roughness, Diffusion, Polymers, Stochastic processes

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The performance of chemically amplified resist is approaching its physical limit with the reduction of feature sizes due to the acid diffusion needed for the solubility change of resist polymer. The line edge roughness (LER) of chemically amplified resists rapidly increases in the sub-10-nm-half-pitch region when the half-pitch is decreased. Also, the stochastic defect (pinching and bridges) generation is a significant concern for the high resolution patterning with high throughput. To solve these problems, the increase of the density of resist films is an important strategy. Metal oxide nanoparticle resists have attracted much attention as the next generation resist used for the high-volume production of semiconductor devices because of their high density property. However, the sensitization mechanism of the metal oxide nanoparticle resists is unknown. Understanding the sensitization mechanism is important for the efficient development of resist materials. In the previous study[1], the numbers of electron-hole pairs required for the solubility change of the resist films were estimated for a zirconia nanoparticle and a ligand shell, respectively. In this study, the pattern formation mechanism of zirconia nanoparticle resist was investigated. The elementary reactions possibly induced in the zirconia nanoparticle resist were investigated using a pulse radiolysis method. The pulse radiolysis is a powerful method to directly observe the kinetics of short-lived intermediates produced by an ionizing radiation. The pattern formation mechanism was assumed by integrating the elementary reactions. The resist patterns fabricated using an EUV exposure tool were analyzed on the basis of the assumed pattern formation mechanism. In the material design of metal oxide nanoparticle resists, it is important to efficiently use the electron-hole pairs generated in nanoparticles for the chemical change of ligand molecules. Acknowledgement This work was partially supported by Ministry of Economy, Trade and Industry (METI) and the New Energy and Industrial Technology Development Organization (NEDO). Reference [1] T. Kozawa, J. J. Santillan, and T. Itani, “Electron–hole pairs generated in ZrO2 nanoparticle resist upon exposure to extreme ultraviolet radiation”, Jpn. J. Appl. Phys. 57, 026501 (2018).

Proceedings Article | 3 October 2018 Presentation + Paper

Material design for the improvement of ZEP520A performance

A. Nakajima, T. Kozawa, M. Hoshino, M. Hashimoto

Proceedings Volume 10810, 108100O (2018) https://doi.org/10.1117/12.2501648

KEYWORDS: Polymers, Electron beam lithography, Molecules, Scanning electron microscopy, Silicon, Semiconducting wafers, Lithography, Nanolithography, Nanoimprint lithography, Polymethylmethacrylate

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Proceedings Article | 19 March 2018 Presentation

Sensitization and reaction mechanisms of ZrO2 nanoparticle resist used for extreme-ultraviolet lithography (Conference Presentation)

Takahiro Kozawa, Satoshi Ishihara, Hiroki Yamamoto, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 10583, 105831O (2018) https://doi.org/10.1117/12.2297654

KEYWORDS: Nanoparticles, Zirconium dioxide, Extreme ultraviolet lithography, Metals, Oxides, Chemically amplified resists, Line edge roughness, Diffusion, Polymers, Stochastic processes

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Proceedings Article | 19 March 2018 Presentation + Paper

Sensitizers in EUV chemically amplified resist: mechanism of sensitivity improvement

Yannick Vesters, Jing Jiang, Hiroki Yamamoto, Danilo De Simone, Takahiro Kozawa, Stefan De Gendt, Geert Vandenberghe

Proceedings Volume 10583, 1058307 (2018) https://doi.org/10.1117/12.2297627

KEYWORDS: Absorption, Photoresist materials, Electrons, Photons, Photoresist developing, Extreme ultraviolet lithography, Metals, Extreme ultraviolet, Polymers, Yield improvement

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Proceedings Article | 13 March 2018 Paper

Study of electron beam and extreme ultraviolet resist utilizing polarity change and radical crosslinking

Satoshi Enomoto, Takumi Yoshino, Kohei Machida, Takahiro Kozawa

Proceedings Volume 10586, 105860H (2018) https://doi.org/10.1117/12.2297392

KEYWORDS: Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Electron beams, Chemically amplified resists, Lithography, Absorption, Diffusion, Line width roughness, Molecules

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Proceedings Article | 13 March 2018 Paper

Synthesis of metal nanoparticle and patterning in polymeric films induced by electron beam

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Jean-Louis Marignier, Mehran Mostafavi, Jacqueline Belloni

Proceedings Volume 10586, 105861G (2018) https://doi.org/10.1117/12.2297331

KEYWORDS: Polymers, Metals, Electron beams, Silver, Nanoparticles, Polymer thin films, Picosecond phenomena, Ions, Absorption, Absorbance

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Proceedings Article | 27 March 2017 Presentation + Paper

Lamellar orientation of block copolymer using polarity switch of nitrophenyl self-assembled monolayer induced by electron beam

Hiroki Yamamoto, Guy Dawson, Takahiro Kozawa, Alex P. Robinson

Proceedings Volume 10146, 1014613 (2017) https://doi.org/10.1117/12.2257953

KEYWORDS: Directed self assembly, Self-assembled monolayers, Lithography, Switches, Electron beams, NOx, Reactive ion etching, Process control, Nanostructures, Nanolithography, Chemistry, Gold, Silicon, Annealing, Optical lithography, Polymethylmethacrylate

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Proceedings Article | 25 March 2016 Paper

Study on stochastic phenomena induced in chemically amplified poly(4-hydroxystyrene-co-t-butyl methacrylate) resist (high performance model resist for extreme ultraviolet lithography)

Takahiro Kozawa, Julius Santillan, Toshiro Itani

Proceedings Volume 9779, 97790E (2016) https://doi.org/10.1117/12.2218839

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Extreme ultraviolet, Line edge roughness, Chemically amplified resists, Lithography, Semiconductors, Photoresist processing, Bridges, Optical lithography, Molecules, Polymers, Scanning electron microscopy, Chemical analysis, Monte Carlo methods

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Proceedings Article | 21 March 2016 Paper

EB and EUV lithography using inedible cellulose-based biomass resist material

Satoshi Takei, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 9779, 977929 (2016) https://doi.org/10.1117/12.2217481

KEYWORDS: Lithography, Extreme ultraviolet lithography, Photoresist processing, Electron beam lithography, Electron beams, Extreme ultraviolet, Etching, Silicon, Polymers, Chemical species, Oxygen

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Proceedings Article | 18 March 2016 Paper

Fundamental study on dissolution behavior of poly(methyl methacrylate) by quartz crystal microbalance

Akihiro Konda, Hiroki Yamamoto, Shusuke Yoshitake, Takahiro Kozawa

Proceedings Volume 9776, 977629 (2016) https://doi.org/10.1117/12.2218965

KEYWORDS: Silicon films, Quartz, Crystals, Lithography, Line width roughness, Photoresist processing, Extreme ultraviolet, Optical filters, Polymers, Polymer thin films

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Proceedings Article | 9 July 2015 Paper

Dynamics of radical ions of fluorinated polymer for Extreme Ultraviolet (EUV) lithography

Naoya Nomura, Kazumasa Okamoto, Hiroki Yamamoto, Takahiro Kozawa, Ryoko Fujiyoshi, Kikuo Umegaki

Proceedings Volume 9658, 96581C (2015) https://doi.org/10.1117/12.2193060

KEYWORDS: Fluorine, Extreme ultraviolet, Polymers, Chemical species, Extreme ultraviolet lithography, Absorption, Radiation effects, Lithography, Chemical reactions, Ions

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Proceedings Article | 20 March 2015 Paper

Evaluation of novel lactone derivatives for chemically amplified EUV resists

Hiroyasu Tanaka, Tetsuhiko Mizusaka, Hiroyuki Tanagi, Kikuo Furukawa, Hiroki Yamamoto, Takahiro Kozawa

Proceedings Volume 9425, 94251R (2015) https://doi.org/10.1117/12.2083755

KEYWORDS: Extreme ultraviolet lithography, Polymers, Line edge roughness, Extreme ultraviolet, Lithography, Photoresist materials, Optical lithography, Diffusion, Statistical modeling, Photopolymers

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Proceedings Article | 20 March 2015 Paper

High-sensitivity green resist material with organic solvent-free spin-coating and tetramethylammonium hydroxide-free water-developable processes for EB and EUV lithography

Satoshi Takei, Makoto Hanabata, Akihiro Oshima, Miki Kashiwakura, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 9425, 94251P (2015) https://doi.org/10.1117/12.2081829

KEYWORDS: Photoresist processing, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Etching, Polymers, Silicon, Oxygen, Chemical species, Thin films

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Proceedings Article | 19 March 2015 Paper

Effects of low-molecular weight resist components on dissolution behavior of chemically amplified resists for extreme ultraviolet lithography studied by quartz crystal microbalance

Masaki Mitsuyasu, Hiroki Yamamoto, Takahiro Kozawa

Proceedings Volume 9422, 94222D (2015) https://doi.org/10.1117/12.2085482

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Polymers, Quartz, Crystals, Photoresist processing, Lithography, Chemically amplified resists, Thin films, Silicon

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Proceedings Article | 13 March 2015 Paper

Relationship between information and energy carried by extreme-ultraviolet photons: consideration from the viewpoint of sensitivity enhancement

Takahiro Kozawa, Shinya Fujii, Julius Santillan, Toshiro Itani

Proceedings Volume 9422, 942206 (2015) https://doi.org/10.1117/12.2085619

KEYWORDS: Photons, Line edge roughness, Quantum efficiency, Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Monte Carlo methods, Stochastic processes, Chemically amplified resists

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Proceedings Article | 13 March 2015 Paper

Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography

Yoshitaka Komuro, Hiroki Yamamoto, Kazuo Kobayashi, Katsumi Ohomori, Takahiro Kozawa

Proceedings Volume 9422, 94220O (2015) https://doi.org/10.1117/12.2085749

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Polymers, Double positive medium, Chemically amplified resists, Quantum efficiency, Lithography, Diffusion, Line width roughness, Ionization

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Proceedings Article | 8 May 2014 Paper

Organic solvent-free sugar-based transparency nanopatterning material derived from biomass for eco-friendly optical biochips using green lithography

Satoshi Takei, Akihiro Oshima, Tomoko Oyama, Kenta Ito, Kigenn Sugahara, Miki Kashiwakura, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 9129, 912917 (2014) https://doi.org/10.1117/12.2045633

KEYWORDS: Nanostructures, Lithography, Transparency, Antireflective coatings, Refractive index, Biomedical optics, Polymers, Electron beam lithography, Interfaces, Biology

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Proceedings Article | 2 May 2014 Paper

Approach of pullulan derivatives to resist polymers for green lithography in eco-friendly optical NEMS and MEMS

Satoshi Takei, Akihiro Oshima, Kenta Ito, Kigenn Sugahara, Miki Kashiwakura, Tomoko Oyama, Takahiro Kozawa, Seiichi Tagawa, Makoto Hanabata

Proceedings Volume 9130, 913011 (2014) https://doi.org/10.1117/12.2045636

KEYWORDS: Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist processing, Polymers, Nanoelectromechanical systems, Etching, Microelectromechanical systems, Glucose, Dry etching

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Proceedings Article | 17 April 2014 Paper

Electron and hole transfer in anion-bound chemically amplified resists used in extreme ultraviolet lithography

Yoshitaka Komuro, Hiroki Yamamoto, Yoshiyuki Utsumi, Katsumi Ohmori, Takahiro Kozawa

Proceedings Volume 9048, 90481F (2014) https://doi.org/10.1117/12.2046627

KEYWORDS: Polymers, Chemically amplified resists, Extreme ultraviolet lithography, Absorption, Diffusion, Extreme ultraviolet, Ionization, Line edge roughness, Electron beams, Matrices

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Proceedings Article | 17 April 2014 Paper

EUV resist simulation based on process parameters of pattern formation reaction

Norihiko Sugie, Toshiro Itani, Takahiro Kozawa

Proceedings Volume 9048, 90482G (2014) https://doi.org/10.1117/12.2046229

KEYWORDS: Extreme ultraviolet, Photoresist processing, Monte Carlo methods, Lithography, Line edge roughness, Line width roughness, Extreme ultraviolet lithography, Scanning electron microscopy, Stochastic processes, Image processing

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Proceedings Article | 17 April 2014 Paper

Stochastic effects in fabrication of 11nm line-and-space patterns using extreme ultraviolet lithography

Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 9048, 904806 (2014) https://doi.org/10.1117/12.2046225

KEYWORDS: Stochastic processes, Line edge roughness, Polymers, Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Quantum efficiency, Bridges, Photons, Lithography

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Proceedings Article | 27 March 2014 Paper

Study on resist performance of chemically amplified molecular resist based on noria derivative and calixarene derivative

Hiroki Yamamoto, Hiroto Kudo, Takahiro Kozawa

Proceedings Volume 9051, 90511Z (2014) https://doi.org/10.1117/12.2046595

KEYWORDS: Etching, Line width roughness, Extreme ultraviolet, Lithography, Extreme ultraviolet lithography, Polymers, Silicon, Reactive ion etching, Scanning electron microscopy, Molecules

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Proceedings Article | 27 March 2014 Paper

Characterization of chemically amplified resists for electron beam lithography

Tomoharu Yamazaki, Hiroki Yamamoto, Takahiro Kozawa, Wen-Chuan Wang

Proceedings Volume 9051, 90511J (2014) https://doi.org/10.1117/12.2046240

KEYWORDS: Line edge roughness, Electron beams, Chemically amplified resists, Electron beam lithography, Diffusion, Chemical reactions, Image acquisition, Polymers, Photoresist processing, Lithography

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Proceedings Article | 27 March 2014 Paper

Fluidity dependence of deprotonation kinetics of chemically amplified resist

Kazumasa Okamoto, Takuya Ishida, Hiroki Yamamoto, Takahiro Kozawa, Ryoko Fujiyoshi, Kikuo Umegaki

Proceedings Volume 9051, 90511T (2014) https://doi.org/10.1117/12.2046057

KEYWORDS: Chemically amplified resists, Absorption, Extreme ultraviolet, Lithography, Electron beams, Chromium, Ionization, Solids, Electron beam lithography, Photoresist processing

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Proceedings Article | 27 March 2014 Paper

Deprotonation mechanism of ionized poly(4-hydroxystyrene)

Toshihiko Susa, Kazumasa Okamoto, Takuya Ishida, Hiroki Yamamoto, Takahiro Kozawa, Ryoko Fujiyoshi, Kikuo Umegaki

Proceedings Volume 9051, 90511O (2014) https://doi.org/10.1117/12.2045881

KEYWORDS: Absorption, Polymers, Extreme ultraviolet, Oxygen, Molecules, Lithography, Chemically amplified resists, Hydrogen, Scientific research, Electron beams

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Proceedings Article | 27 March 2014 Paper

Development of novel protecting derivatives for chemically amplified extreme ultraviolet resist

Hiroyasu Tanaka, Hiroyuki Tanagi, Shoichi Hayakawa, Kikuo Furukawa, Hiroki Yamamoto, Takahiro Kozawa

Proceedings Volume 9051, 905127 (2014) https://doi.org/10.1117/12.2045887

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Lithography, Line edge roughness, Optical lithography, Photoresist developing, Scanning electron microscopy, Photoresist materials, Photoresist processing

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Proceedings Article | 27 March 2014 Paper

Evaluation of novel hydrophilic derivatives for chemically amplified EUV resists

Hiroyuki Tanagi, Hiroyasu Tanaka, Shoichi Hayakawa, Kikuo Furukawa, Hiroki Yamamoto, Takahiro Kozawa

Proceedings Volume 9051, 905125 (2014) https://doi.org/10.1117/12.2045892

KEYWORDS: Polymers, Extreme ultraviolet lithography, Line edge roughness, Extreme ultraviolet, Lithography, Diffusion, Scanning electron microscopy, Resolution enhancement technologies, Polymethylmethacrylate, Optical lithography

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Proceedings Article | 1 April 2013 Paper

Relationship between stochastic effect and resist pattern defect in extreme ultraviolet lithography

Takahiro Kozawa, Julius Santillan, Toshiro Itani

Proceedings Volume 8679, 867913 (2013) https://doi.org/10.1117/12.2011240

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Polymers, Extreme ultraviolet, Bridges, Molecules, Scanning electron microscopy, Line edge roughness, Monte Carlo methods, Diffusion

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Proceedings Article | 29 March 2013 Paper

Study on dissolution behavior of polymer-bound and polymer-blended photo-acid generator (PAG) resists

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 8682, 86821B (2013) https://doi.org/10.1117/12.2011636

KEYWORDS: Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Ionization, Matrices, Photoresist processing, Quartz, Optical lithography, Line edge roughness

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Proceedings Article | 29 March 2013 Paper

EUV lithography using water-developable resist material derived from biomass

Satoshi Takei, Akihiro Oshima, Tomoko Oyama, Takumi Ichikawa, Atsushi Sekiguchi, Miki Kashiwakura, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 8682, 86821T (2013) https://doi.org/10.1117/12.2010643

KEYWORDS: Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Photoresist processing, Absorption, Image processing, Polymers, Etching, Safety, Optical lithography

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Proceedings Article | 9 May 2012 Paper

Development of water-developable resist material derived from biomass in EB lithography

Satoshi Takei, Akihiro Oshima, Takanori Wakabayashi, Atsushi Sekiguchi, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 8428, 84281V (2012) https://doi.org/10.1117/12.924802

KEYWORDS: Lithography, Photoresist processing, Polymers, Dry etching, Silicon, Etching, Electronic components, Coating, Semiconducting wafers, Safety

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Proceedings Article | 5 May 2012 Paper

Ellipsometrical detection of optical trapped nanoparticles by periodically localized light

Naoya Taki, Yasuhiro Mizutani, Tetsuo Iwata, Takao Kojima, Hiroki Yamamoto, Takahiro Kozawa

Proceedings Volume 8430, 84300Y (2012) https://doi.org/10.1117/12.922879

KEYWORDS: Optical tweezers, Silicon, Polarization, Nanoparticles, Interfaces, Polarizers, Phase measurement, Numerical analysis, Particles, Diffraction

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Proceedings Article | 21 March 2012 Paper

Modeling and simulation of acid diffusion in chemically amplified resists with polymer-bound acid generator

Takahiro Kozawa, Julius Joseph Santillan, Toshiro Itani

Proceedings Volume 8322, 832206 (2012) https://doi.org/10.1117/12.916293

KEYWORDS: Diffusion, Chemically amplified resists, Polymers, Line edge roughness, Extreme ultraviolet, Chemical analysis, Monte Carlo methods, Extreme ultraviolet lithography, Line width roughness, Photons

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Proceedings Article | 16 April 2011 Paper

Deprotonation mechanism of poly(styrene-acrylate)-based chemically amplified resist

Y. Tajima, K. Okamoto, T. Kozawa, S. Tagawa, R. Fujiyoshi, T. Sumiyoshi

Proceedings Volume 7972, 79721N (2011) https://doi.org/10.1117/12.879362

KEYWORDS: Picosecond phenomena, Absorption, Extreme ultraviolet, Polymers, Chemically amplified resists, Lithography, Oscillators, Ionization, Polymethylmethacrylate, Semiconductors

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Proceedings Article | 16 April 2011 Paper

Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, Seiichi Tagawa

Proceedings Volume 7972, 79720U (2011) https://doi.org/10.1117/12.879331

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Matrices, Chemical analysis, Image processing, Chemically amplified resists, Extreme ultraviolet, Quantum efficiency, Materials processing, Glasses

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Proceedings Article | 16 April 2011 Paper

Fundamental study on reaction mechanisms in chemically amplified extreme ultraviolet resists by using 61nm free-electron laser

Kazumasa Okamoto, Takahiro Kozawa, Takaki Hatsui, Yasuharu Tajima, Keita Oikawa, Mitsuru Nagasono, Takashi Kameshima, Tadashi Togashi, Kensuke Tono, Makina Yabashi, Hiroaki Kimura, Yasunori Senba, Haruhiko Ohashi, Takashi Sumiyoshi

Proceedings Volume 7972, 797217 (2011) https://doi.org/10.1117/12.879358

KEYWORDS: Ionization, Extreme ultraviolet, Free electron lasers, Ions, Electrons, Argon, Polymers, Protactinium, Absorption, Extreme ultraviolet lithography

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Proceedings Article | 16 April 2011 Paper

Characterization of EUV irradiation effects on polystyrene derivatives studied by x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS)

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 7972, 79721H (2011) https://doi.org/10.1117/12.879412

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Picosecond phenomena, Ionization, Photoemission spectroscopy, Electrons, X-rays, Ultraviolet radiation, Thin films

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Proceedings Article | 16 April 2011 Paper

Development of plant-based resist materials in electron beam lithography

Satoshi Takei, Akihiro Oshima, Naomi Yanamori, Atsushi Sekiguchi, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 7972, 797229 (2011) https://doi.org/10.1117/12.878451

KEYWORDS: Lithography, Etching, Electron beam lithography, Photoresist processing, Glucose, Polymerization, Carbon, Oxygen, Photomasks, Electron beams

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Proceedings Article | 8 April 2011 Paper

Acid proliferation to improve the sensitivity of EUV resists: a pulse radiolysis study

Kazuyuki Enomoto, Koji Arimitsu, Atsutaro Yoshizawa, Hiroki Yamamoto, Akihiro Oshima, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 7969, 79692M (2011) https://doi.org/10.1117/12.881672

KEYWORDS: Electrons, Extreme ultraviolet, Absorption, Amplifiers, Liquids, Absorbance, Chemistry, Extreme ultraviolet lithography, Lithography, Polymers

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Proceedings Article | 30 March 2010 Paper

Negative-tone chemically amplified molecular resist based on novel fullerene derivative for nanolithography

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Tomoyuki Ando, Katsumi Ohmori, Mitsuru Sato, Junichi Onodera

Proceedings Volume 7639, 76390U (2010) https://doi.org/10.1117/12.846391

KEYWORDS: Fullerenes, Etching, Nanolithography, Electron beams, Lithography, Polymers, Reactive ion etching, Ultraviolet radiation, Line edge roughness, Silicon

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Proceedings Article | 30 March 2010 Paper

Evaluation of hydroxyl derivatives for chemically amplified extreme ultraviolet resist

Kikuo Furukawa, Yoshihisa Arai, Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 7639, 76391L (2010) https://doi.org/10.1117/12.846460

KEYWORDS: Extreme ultraviolet lithography, Polymers, Extreme ultraviolet, Quantum efficiency, Diffusion, Lithography, Photopolymers, Line edge roughness, Photoresist materials, Absorption

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Proceedings Article | 30 March 2010 Paper

Dynamics of radical cation of poly(4-hydroxystyrene) generated in thin film upon exposure to electron beam

Kenichiro Natsuda, Takahiro Kozawa, Kazumasa Okamoto, Akinori Saeki, Seiichi Tagawa

Proceedings Volume 7639, 76391K (2010) https://doi.org/10.1117/12.846699

KEYWORDS: Absorption, Solids, Electron beams, Polymers, Extreme ultraviolet lithography, FT-IR spectroscopy, Absorbance, Chromium, Chemically amplified resists, Extreme ultraviolet

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Proceedings Article | 26 March 2010 Paper

Analysis of trade-off relationships in resist patterns delineated using SFET of Selete

Takahiro Kozawa, Hiroaki Oizumi, Toshiro Itani, Seiichi Tagawa

Proceedings Volume 7639, 76390B (2010) https://doi.org/10.1117/12.846500

KEYWORDS: Line edge roughness, Extreme ultraviolet lithography, Chemical analysis, Extreme ultraviolet, Chemically amplified resists, Line width roughness, Matrices, Image processing, Scanning electron microscopy, Lithography

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Proceedings Article | 1 April 2009 Paper

Evaluation of alcoholic hydroxyl derivatives for chemically amplified extreme ultraviolet resist

Kikuo Furukawa, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 7273, 72731Y (2009) https://doi.org/10.1117/12.814005

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Lithography, Diffusion, Photopolymers, Oxygen, Statistical modeling, Electrons, Polymethylmethacrylate

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Proceedings Article | 1 April 2009 Paper

Dissolution kinetics and deprotection reaction in chemically amplified resists upon exposure to extreme ultraviolet radiation

Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Takeyoshi Mimura, Takeshi Iwai, Junichi Onodera

Proceedings Volume 7273, 72731X (2009) https://doi.org/10.1117/12.814066

KEYWORDS: Polymers, Extreme ultraviolet lithography, Extreme ultraviolet, Absorption, Chemically amplified resists, Absorbance, Image processing, Silicon, Ultraviolet radiation, Line width roughness

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