Presentation + Paper
31 January 2020 Solar-blind photodetectors based on Ga2O3 and III-nitrides
Author Affiliations +
Abstract
Recently, there has been a surge of interest in the wide bandgap semiconductors for solar blind photo detectors (SBPD). This work presents our recent progress in the growth/doping of AlGaN and Ga2O3 thin films for solar blind detection applications. Both of these thin films grown are grown by metal organic chemical vapor deposition (MOCVD) in the same Aixtron MOCVD system. Solar-blind metal-semiconductor-metal photodetectors were fabricated with Ga2O3. Spectral responsivity studies of the MSM photodetectors revealed a peak at 261 nm and a maximum EQE of 41.7% for a −2.5 V bias. We have also demonstrated AlGaN based solar-blind avalanche photodiodes with a gain in excess of 57,000 at ~100 volts of reverse bias. This gain can be attributed to avalanche multiplication of the photogenerated carriers within the device. Both of these devices show the potential of wide bandgap semiconductors for solar blind photo detectors.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ryan McClintock, Alexander Jaud, Lakshay Gautam, and Manijeh Razeghi "Solar-blind photodetectors based on Ga2O3 and III-nitrides", Proc. SPIE 11288, Quantum Sensing and Nano Electronics and Photonics XVII, 1128803 (31 January 2020); https://doi.org/10.1117/12.2549606
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Gallium

Thin films

Photodetectors

Sapphire

Metalorganic chemical vapor deposition

Ultraviolet radiation

Avalanche photodetectors

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