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31 December 2019 Influence of the ratio of gate length to source-drain distance on the sensitivity of the AlGaN/GaN HEMT based chemical sensors and biosensors
Dongyang Xue, Heqiu Zhang, Hongwei Liang, Jun Liu, Xiaochuan Xia
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Proceedings Volume 11384, Eleventh International Conference on Signal Processing Systems; 113841E (2019) https://doi.org/10.1117/12.2559622
Event: Eleventh International Conference on Signal Processing Systems, 2019, Chengdu, China
Abstract
In this paper, the mechanism of the open-gate AlGaN/GaN HEMT based sensors were discussed and the effect of the ratio of gate length (LG) to source-drain distance (LSD) on the transconductance (gm) of the sensors was investigated. It was shown that the smaller LG/LSD of the devices would get a higher maximum gm (gm-max). However, when the gate voltage (VG) increased to a certain extent, the gm of the larger LG/LSD devices would be higher. The experimental results were demonstrated by further theoretical calculation and analysis which is beneficial to enhance the sensitivity of the AlGaN/GaN HEMT based chemical sensors and biosensors by improving the gm of them.
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Dongyang Xue, Heqiu Zhang, Hongwei Liang, Jun Liu, and Xiaochuan Xia "Influence of the ratio of gate length to source-drain distance on the sensitivity of the AlGaN/GaN HEMT based chemical sensors and biosensors", Proc. SPIE 11384, Eleventh International Conference on Signal Processing Systems, 113841E (31 December 2019); https://doi.org/10.1117/12.2559622
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KEYWORDS
Sensors
Field effect transistors
Biosensors
Chemical fiber sensors
Electrodes
Liquids
Gallium nitride
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