Novel spin- and valley-dependent excitonic states in atomically thin semiconductor devices

Chun Hung Lui

doi:10.1117/12.2570597

20 August 2020 Novel spin- and valley-dependent excitonic states in atomically thin semiconductor devices

Chun Hung Lui

Proceedings Volume 11470, Spintronics XIII; 114702F (2020) https://doi.org/10.1117/12.2570597
Event: SPIE Nanoscience + Engineering, 2020, Online Only

Abstract

When the Coulomb interaction becomes strong in semiconductors, the electrons and holes can interact to form excitonic states, which govern the materials’ optical properties. In atomically thin transition metal dichalcogenide (TMD) devices encapsulated by boron nitride, we observe various excitonic states with distinctive spin and valley configurations, including the bright and dark excitons, and intra- and inter-valley excitons. These excitons exhibit complex interactions with photons and phonons, giving rise to a panoply of emission lines. We have tailored the excitonic properties by using the charge density, magnetic field, and moiré potential. These novel excitonic states with adjustable properties hold promises for the development of next-generation excitonic devices.

Conference Presentation

Citation Download Citation

Chun Hung Lui "Novel spin- and valley-dependent excitonic states in atomically thin semiconductor devices", Proc. SPIE 11470, Spintronics XIII, 114702F (20 August 2020); https://doi.org/10.1117/12.2570597

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