Presentation
22 February 2021 Selective patterning using deposition and etch: case of area selective deposition
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Abstract
3D and nanoscale dimensions make patterning extremely difficult to perform. In the past, patterning via plasma etching was a success thanks to the very good capacity of this process to etch one preferential material over the others: selective etching. Next step for advanced patterning will be to add a selective deposition step in addition to the etch one. Good examples are area selective deposition and topographical selective deposition. They will be discuss in this presentation
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
christophe vallee, Marceline Bonvalot, Taguhi Yeghoyan, Moustapha Jaffal, Nicolas Posseme, Remy Gassilloud, and Thierry Chevolleau "Selective patterning using deposition and etch: case of area selective deposition", Proc. SPIE 11615, Advanced Etch Technology and Process Integration for Nanopatterning X, 116150C (22 February 2021); https://doi.org/10.1117/12.2582079
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KEYWORDS
Etching

Optical lithography

Deposition processes

Atomic layer deposition

Plasma etching

Reactive ion etching

Anisotropic etching

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