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5 March 2021 Thin-film flip-chip UVB LEDs enabled by electrochemical etching
Michael A. Bergmann, Johannes Enslin, Martin Guttmann, Luca Sulmoni, Neysha Lobo-Ploch, Filip Hjort, Tim Kolbe, Tim Wernicke, Michael Kneissl, Åsa Haglund
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 1168612 (2021) https://doi.org/10.1117/12.2582972
Event: SPIE OPTO, 2021, Online Only
Abstract
We here demonstrate thin-film flip-chip (TFFC) ultraviolet-B light-emitting diodes (LEDs) fabricated by a standard LED process and followed by a substrate removal based on selective electrochemical etching of an n-doped multilayered Al0.11Ga0.89N/Al0.37Ga0.63N sacrificial layer. The integration of the LEDs to a Si carrier using thermocompression bonding allowed roughening of the N-polar AlGaN side of the TFFC LEDs using TMAH-etching, which increased the light extraction efficiency by approximately 45% without negatively affecting the I-V-characteristics. This resulted in an optical output power of 0.47 mW at 10 mA for an LED with a p-contact area of 0.03 mm2.
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Michael A. Bergmann, Johannes Enslin, Martin Guttmann, Luca Sulmoni, Neysha Lobo-Ploch, Filip Hjort, Tim Kolbe, Tim Wernicke, Michael Kneissl, and Åsa Haglund "Thin-film flip-chip UVB LEDs enabled by electrochemical etching", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168612 (5 March 2021); https://doi.org/10.1117/12.2582972
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KEYWORDS
Light emitting diodes
Electrochemical etching
Thin films
Ultraviolet radiation
Multilayers
Silica
Silicon
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