Presentation + Paper
5 March 2021 Enhanced efficiency in bottom tunnel junction InGaN blue LEDs
Author Affiliations +
Abstract
The physics of the bottom tunnel junction (BTJ) and its improvement over standard p-up geometry in InGaN blue LEDs is quantified through pulsed power measurements. It is found that the peak external quantum efficiency (EQE) and wall-plug efficiency (WPE) for a p-down BTJ LED is about threefold that of its counterpart, the p-up top tunnel junction (TTJ) LED. This is contributed to increased radiative recombination and reduced electron overflow. Further, the peaks occur at lower current densities for the BTJ device, suggesting earlier saturation of Shockley-Read-Hall traps. In the droop regime, where electron overflow, device heating, and 3-particle interactions are significant, the performance of the BTJ is found to be consistently better than that of the TTJ, converging at large current densities where the polarization fields are screened.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Len van Deurzen, Shyam Bharadwaj, Kevin Lee, Vladimir Protasenko, Henryk Turski, Huili (Grace) Xing, and Debdeep Jena "Enhanced efficiency in bottom tunnel junction InGaN blue LEDs", Proc. SPIE 11706, Light-Emitting Devices, Materials, and Applications XXV, 117060F (5 March 2021); https://doi.org/10.1117/12.2582439
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Cited by 1 scholarly publication.
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