Molecular beam epitaxial InSb infrared photodiode with low dark current

Xubo Zhu; Yanqiu Lyu; Zhenyu Peng; Xiancun Cao; Lixue Zhang; Guansheng Yao; Jiaxin Ding

doi:10.1117/12.2585696

12 March 2021 Molecular beam epitaxial InSb infrared photodiode with low dark current

Xubo Zhu, Yanqiu Lyu, Zhenyu Peng, Xiancun Cao, Lixue Zhang, Guansheng Yao, Jiaxin Ding

Proceedings Volume 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications; 117630F (2021) https://doi.org/10.1117/12.2585696
Event: Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, 2020, Kunming, China

Abstract

The InSb epitaxial layer of p⁺-n-n⁺ structure was grown by Molecular Beam Epitaxy (MBE) on a heavily doped InSb substrate. Photodiodes of InSb were fabricated by standard semiconductor manufacturing process. Measurement and analysis of its electrical properties was carried out. Compared with traditional bulk crystal InSb of p⁺-n structure, we find that, when the external bias voltage is 0.1V, dark current density values of p⁺-n-n⁺ InSb device and InSb bulk material device is 1.1×10^-6 A·cm^-2 and 9.5×10^-5 A·cm^-2 at 77K, respectively. zero-bias-resistance area products is 8.9×10⁴Ω·cm² and 6.2×10³ Ω·cm² at 77K, respectively. Doping concentrations values in the absorption layers are equal to 5.0×10¹⁴ cm^-3 and 1.3×10¹⁶ cm^-3 , respectively. The InSb epitaxial layer of p⁺-n-n⁺ structure which has better crystal quality achieves better performance than bulk crystal InSb when the passivation process is reliable. It provides an important foundation for the fabrication of epitaxial InSb infrared detector.

Citation Download Citation

Xubo Zhu, Yanqiu Lyu, Zhenyu Peng, Xiancun Cao, Lixue Zhang, Guansheng Yao, and Jiaxin Ding "Molecular beam epitaxial InSb infrared photodiode with low dark current", Proc. SPIE 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, 117630F (12 March 2021); https://doi.org/10.1117/12.2585696

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