Radiation resistance of Hg3In2Te6 near-infrared photodiodes

V. Skliarchuk; P. Fochuk; A. Bolotnikov; R. B. James

doi:10.1117/12.2595844

1 September 2021 Radiation resistance of Hg₃In₂Te₆ near-infrared photodiodes

V. Skliarchuk, P. Fochuk, A. Bolotnikov, R. B. James

Proceedings Volume 11838, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII; 118381B (2021) https://doi.org/10.1117/12.2595844
Event: SPIE Optical Engineering + Applications, 2021, San Diego, California, United States

Conference Poster

Abstract

The design and technology of photodiodes manufacturing with a potential barrier as Schottky contact based on a substrate of radiation-resistant n-Hg₃In₂Te₆ single crystal are presented. The photosensitivity of the photodetector covers the wavelength range λ≈0.6-1.6 μm at the maximum current monochromatic sensitivity S_λ≈1.15 A/wt for the λ_max≈1.55 μm. To study the effect of contact material on the effect of the absorbed dose of ionizing radiation, two types of photodetectors Ni/n-Hg₃In₂Te₆/In and Cr/n-Hg₃In₂Te₆/Cr were fabricated. A study of the effect of absorbed doses of ionizing radiation D_γ1≈10⁵ , D_γ2≈10⁶ і D_γ3≈10⁷ Gray on the main parameters of photodetectors: S_λ, λ_max, dark currents at forward and reverse bias, open circuit voltage, short circuit current. Photodiodes, based on mercury-indium telluride (HgInTe), showed high resistance to ionizing radiation. The best resistance to ionizing radiation was shown by Cr/HgInTe/Cr photodiodes, which slightly changed their basic parameters at the absorbed dose of D_γ3≈10⁷ Gray. Ni/HgInTe/In photodetectors lost their function after exposure to an absorbed dose of D_γ3≈10⁷ Gray. In Ni/HgInTe/In photodetectors the absorbed dose of D_γ3≈10⁷ Gray practically destroyed the indium contact. 30-50 % of nickel front contact was also destroyed. For comparison, similar studies were performed with photodetectors based on cadmium telluride Cr/CdTe/In, prepared by the authors and silicon too. As silicon-based photodetectors the industrial photodiodes were used.

Citation Download Citation

V. Skliarchuk, P. Fochuk, A. Bolotnikov, and R. B. James "Radiation resistance of Hg₃In₂Te₆ near-infrared photodiodes", Proc. SPIE 11838, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIII, 118381B (1 September 2021); https://doi.org/10.1117/12.2595844

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