We describe progress developing infrared detectors with HgCdTe grown on silicon substrates using Molecular Beam Epitaxial growth. The project is a collaboration between the RIT Center for Detectors and Raytheon Vision Systems (RVS). NASA and NSF jointly funded the program, known as SATIN (Short-wave infrared Advanced Technologies and Instrumentation program funded by NASA and NSF). We present detector characterization results for detectors made in the final lot of devices made by RVS. A full suite of characterization results, including for dark current, read noise, spectral response, persistence, linearity, full well, and crosstalk probability, are presented. The performance satisfies requirements for astronomy imaging applications. We plan to use the design to make HELLSTAR (HgCdTe Extremely Large Layout Sensor Technology for Astrophysics Research), a 4K×6K infrared detector with the highest number of pixels ever made for infrared astronomy.
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