The trade-off between local critical dimension uniformity and sensitivity for contact hole high-NA printing in chemically amplified resists

Chawon Koh; Jinkyu Han; Jinmo Kim; Cheolhong Park; Eunju Kim; Tsunehiro Nishi; Chris Anderson; Patrick Naulleau

doi:10.1117/12.2641648

1 December 2022 The trade-off between local critical dimension uniformity and sensitivity for contact hole high-NA printing in chemically amplified resists

Chawon Koh, Jinkyu Han, Jinmo Kim, Cheolhong Park, Eunju Kim, Tsunehiro Nishi, Chris Anderson, Patrick Naulleau

Author Affiliations +

Proceedings Volume 12292, International Conference on Extreme Ultraviolet Lithography 2022; 1229203 (2022) https://doi.org/10.1117/12.2641648
Event: SPIE Photomask Technology + EUV Lithography, 2022, Monterey, California, United States

Abstract

The trade-off between resist sensitivity and local critical dimension uniformity (LCDU) of contact hole (C/H) patterning is one of the most challenging issues facing cost effective high-numerical aperture (NA) high volume manufacturing. The focus margin at 0.55 NA is only 36% of that at 0.33 NA, which raises significant concerns about defocus-induced LCDU degradation. A chemically amplified resist (CAR_B) which resolved 24 nm pitch showed zero useful depth of focus (DOF) when considering LCDU specification for 32-nm pitch contact holes. If we relax the LCDU target to 18% of half pitch (or 2.88 nm), a useful DOF of 30 nm was obtained with CAR_B at 32 nm pitch contact hole. If we relax the LCDU target to 20% of half pitch (or 2.8 nm), a useful DOF of less than 10 nm was achieved with CAR_A for 28-nm pitch contact hole. Non-CAR positive-tone resist (PTR) was worse than CAR PTR in terms of LCDU at 32-nm pitch and 28-nm pitch dense contact holes. Non-CAR negativetone resist (NTR) has a demerit of ~8% lower NILS caused by usage of clear-tone mask. For sub 30-nm pitch dense contact hole patterning, it is highly recommended to develop positive-tone non-CAR material and to develop new additional processes that improve LCDU for high-NA implementation.

Conference Presentation

Citation Download Citation

Chawon Koh, Jinkyu Han, Jinmo Kim, Cheolhong Park, Eunju Kim, Tsunehiro Nishi, Chris Anderson, and Patrick Naulleau "The trade-off between local critical dimension uniformity and sensitivity for contact hole high-NA printing in chemically amplified resists", Proc. SPIE 12292, International Conference on Extreme Ultraviolet Lithography 2022, 1229203 (1 December 2022); https://doi.org/10.1117/12.2641648

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available