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The ability for the EUV photoresist to reproducibly and reliably print desired features is critical to the success of EUV lithography. However, at the desired feature sizes, fundamental resist inhomogeneities leading to local variations in resist sensitivity are a critical issue. Non-random molecular distributions within chemically amplified EUV photoresists can be caused by a combination of thermodynamics and kinetics. As the solvent evaporates during the spin coating process there is the opportunity at higher solids concentrations for the multi-component chemically amplified EUV resist to enter a state where it is energetically favorable to segregate. Then, any remaining molecular motion before the resist effectively dries to a solid will lead to potential for segregation of those molecules in the resist. We will show recent work to control the segregation by varying the resist coating and processing conditions.
Gregory H. Denbeaux
"EUV resist chemical stochastics and approaches to control it", Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124980G (30 April 2023); https://doi.org/10.1117/12.2661699
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Gregory H. Denbeaux, "EUV resist chemical stochastics and approaches to control it," Proc. SPIE 12498, Advances in Patterning Materials and Processes XL, 124980G (30 April 2023); https://doi.org/10.1117/12.2661699