Research on optoelectronic properties of Zn doped In0.875Ga0.125As0.25P0.75

Yong Wang; Jianxin Li; Junju Zhang; Weiwei Sha; Weipeng Zhang; Yujie Du

doi:10.1117/12.2665928

4 April 2023 Research on optoelectronic properties of Zn doped In_0.875Ga_0.125As_0.25P_0.75

Yong Wang, Jianxin Li, Junju Zhang, Weiwei Sha, Weipeng Zhang, Yujie Du

Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 126173C (2023) https://doi.org/10.1117/12.2665928
Event: 9th Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China

Abstract

InGaAsP photocathodes show great potential for near-infrared applications, particularly at 1.06 μm. In order to study the influence of Zn doping on the optoelectronic properties of In_0.875Ga_0.125As_0.25P_0.75, models of In_0.875Ga_0.125As_0.25P_0.75, In_0.84375Ga_0.125Zn_0.03125As_0.25P_0.75 and In_0.875Ga_0.09375Zn_0.03125As_0.25P_0.75 were constructed. The band structure, formation energy, Mulliken population and optical properties of the Zn doping crystals were calculated from first-principles. Results show that Zn doping reduces the stability of In_0.875Ga_0.125As_0.25P_0.75, and In atom is more inclined to be replaced by Zn atom due to In_0.84375Ga_0.125Zn_0.03125As_0.25P_0.75 has the lower formation energy than In_0.875Ga_0.09375Zn_0.03125As_0.25P_0.75. The covalency of In-As, In–P and GaP bonds is enhanced due to the Zn atom replacing In atom, but Zn atom replaces Ga atom only increases the covalency of Ga-P bond. After Zn doping, the Fermi levels of In_0.84375Ga_0.125Zn_0.03125As_0.25P_0.75 and In_0.875Ga_0.09375Zn_0.03125As_0.25P_0.75 appear in the valence band, indicating that they show p-type properties. Zn atom replacing In atom increases the bandgap, but Zn atom replacing Ga atom is just opposite. Compared to In_0.875Ga_0.125As_0.25P_0.75, doping Zn improves the carrier concentrations, causing the increase of valence band holes which are closely related to conductive behavior of Zn doped crystals. The optical properties of In_0.84375Ga_0.125Zn_0.03125As_0.25P_0.75 and In_0.875Ga_0.09375Zn_0.03125As_0.25P_0.75 are almost the same. The substitution of Zn atom for In or Ga atom in In_0.875Ga_0.125As_0.25P_0.75 improves the electron transition and increases the absorption coefficient in low energy side, but the metal reflective region shifts to lower energy side.

Citation Download Citation

Yong Wang, Jianxin Li, Junju Zhang, Weiwei Sha, Weipeng Zhang, and Yujie Du "Research on optoelectronic properties of Zn doped In_0.875Ga_0.125As_0.25P_0.75", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 126173C (4 April 2023); https://doi.org/10.1117/12.2665928

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