Poster + Paper
8 March 2024 Determination of optical constants of n- and p-type GaAs as a function of carrier concentration
Author Affiliations +
Proceedings Volume 12882, Optical Components and Materials XXI; 128820R (2024) https://doi.org/10.1117/12.2692580
Event: SPIE OPTO, 2024, San Francisco, California, United States
Conference Poster
Abstract
Variable angle spectroscopic ellipsometry was used to determine the optical properties of n- and p-type GaAs over a doping range of 4.6×1016 to 9.3×1018 cm-3 and a spectral range of 190 nm to 30 μm. Increased doping concentration was observed to have several distinct effects on the samples’ optical properties: the band edge broadens and shifts to a higher energy; the E1 and (E1 + Δ1) absorption peaks blur together; the E2 absorption peak decreases; sub-bandgap, infrared absorption increases. Additionally, the doping effects are generally stronger for n-type than for p-type GaAs. These findings will help inform future design of optoelectronics.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Charles W. Dickerson, John H. McElearney, Kevin A. Grossklaus, and Thomas E. Vandervelde "Determination of optical constants of n- and p-type GaAs as a function of carrier concentration", Proc. SPIE 12882, Optical Components and Materials XXI, 128820R (8 March 2024); https://doi.org/10.1117/12.2692580
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KEYWORDS
Gallium arsenide

Doping

Refractive index

Optical properties

Absorption

Light absorption

Data modeling

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