Poster + Paper
11 March 2024 Terahertz emission in SnS2 single crystals: ultrafast shift current
Author Affiliations +
Conference Poster
Abstract
We report on THz emission in single-crystalline SnS2 in response to above bandgap excitation. Symmetry properties of THz generation suggest that its origin is an ultrafast surface shift current, a 2nd order nonlinear effect that can occur as a result of above-gap photoexcitation of a non-centrosymmetric semiconductor. Multilayer SnS2 can exist in several polytypes that differ in the layer stacking. Of those polytypes, 2H and 18R are centrosymmetric while 4H is not. While Raman spectroscopy suggests that the single crystalline SnS2 in our experiments is 2H, its THz emission has symmetry that are fully consistent with the P3m1 phase of 4H polytype. We hypothesize that the stacking disorder, where strain-free stacking faults that interrupt regions of 2H polytype, can break inversion symmetry and result in THz emission. These results lay the foundations for application of SnS2 as an efficient, stable, flexible THz source material, and highlight the use of THz spectroscopy as a sensitive tool for establishing symmetry properties of materials.
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sepideh Khanmohammadi, Kateryna Kushnir, Erin M. Morissette, Curtis W. Doiron, Kristie J. Koski, Ronald L. Grimm, Ashwin Ramasubramamiam, and Lyubov V. Titova "Terahertz emission in SnS2 single crystals: ultrafast shift current", Proc. SPIE 12885, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XVII, 1288512 (11 March 2024); https://doi.org/10.1117/12.3000382
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Terahertz radiation

Crystals

Tin

Ultrafast phenomena

Polarization

Raman spectroscopy

Emission spectroscopy

Back to Top