Layer transfer technique of epitaxial rutile TiO2 thin films for photonic applications

Sabina Kuprenaite; Sylwester Bargiel; Pascal Boulet; Samuel Margueron; Ausrine Bartasyte

doi:10.1117/12.3013506

15 March 2024 Layer transfer technique of epitaxial rutile TiO₂ thin films for photonic applications

Sabina Kuprenaite, Sylwester Bargiel, Pascal Boulet, Samuel Margueron, Ausrine Bartasyte

Proceedings Volume 12887, Oxide-based Materials and Devices XV; 128870H (2024) https://doi.org/10.1117/12.3013506
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Layer transfer technique of epitaxial (00l) oriented rutile TiO₂ films sputtered on sapphire substrates using epitaxial ZnO sacrificial layer was developed. It was demonstrated that obtaining an epitaxial structure for rutile layer transfer can be challenging, due to required control of variety of parameters – surface roughness, growth rate, deposition temperature, interface stresses and lattice matching. It was shown that ZnO, directly grown on M-sapphire substrates, promotes polycrystalline rutile growth. Therefore, 50 nm thick (00l) rutile seed layer with controlled surface roughness grown on M-sapphire substrate was needed to promote the epitaxial (101" 3) ZnO growth, which then allowed to obtain epitaxial (00l) rutile layer suitable for the layer transfer process. The examined structural quality, evaluated by means of X-ray diffraction and Raman spectroscopy, showed that the transferred rutile films exhibit promising properties for photonic applications.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Sabina Kuprenaite, Sylwester Bargiel, Pascal Boulet, Samuel Margueron, and Ausrine Bartasyte "Layer transfer technique of epitaxial rutile TiO₂ thin films for photonic applications", Proc. SPIE 12887, Oxide-based Materials and Devices XV, 128870H (15 March 2024); https://doi.org/10.1117/12.3013506

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