An improved on-state model for trench gate IGBT

Yong Tang; Hui Liu

doi:10.1117/12.3011619

7 December 2023 An improved on-state model for trench gate IGBT

Yong Tang, Hui Liu

Proceedings Volume 12941, International Conference on Algorithms, High Performance Computing, and Artificial Intelligence (AHPCAI 2023); 129412Z (2023) https://doi.org/10.1117/12.3011619
Event: Third International Conference on Algorithms, High Performance Computing, and Artificial Intelligence (AHPCAI 203), 2023, Yinchuan, China

Abstract

According to the physical structure of Trench Gate IGBT and the distribution characteristics of excess carrier in the base region, an improved on-state model considering the two-dimensional distribution of carrier is proposed on the basis of improving the shortcomings of the existing model. In this model, the whole IGBT base region is divided into several regions, and the continuity equation is solved by different boundary conditions, so that the distribution of excess carriers in the base region can be accurately reflected and more accurate simulation results of V-I characteristics can be obtained. Finally, the accuracy of this model is verified by experiments.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Yong Tang and Hui Liu "An improved on-state model for trench gate IGBT", Proc. SPIE 12941, International Conference on Algorithms, High Performance Computing, and Artificial Intelligence (AHPCAI 2023), 129412Z (7 December 2023); https://doi.org/10.1117/12.3011619

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