Validation of non-destructive 3D probe-based metrology for EUV lithography

Nelda Antonovaité; ShihWei Yu; Khalid Elsayed; Erik Simons; Hokyun Chin; Arseniy Kalinin; Irene Battisti; Helda Pahlavani; Seokhan Kim; Artem Khachaturiants; Niranjan Saikumar; Rudolf Wilhelm; Hamed Sadeghian

doi:10.1117/12.3010719

10 April 2024 Validation of non-destructive 3D probe-based metrology for EUV lithography

Nelda Antonovaité, ShihWei Yu, Khalid Elsayed, Erik Simons, Hokyun Chin, Arseniy Kalinin, Irene Battisti, Helda Pahlavani, Seokhan Kim, Artem Khachaturiants, Niranjan Saikumar, Rudolf Wilhelm, Hamed Sadeghian

Author Affiliations +

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 1295531 (2024) https://doi.org/10.1117/12.3010719
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

EUV lithography enables continued scaling beyond 5nm nodes and allows the employment of single patterning methods with improved resolution. Thinner photo-resist layers with shrinking feature sizes consequently make stochastic errors worse during the lithography step and require a metrology solution with sub-nanometer resolution and information in the third dimension (depth and full profile shape). Atomic force microscopy (AFM), a topography imaging technique, can achieve the required precision to capture critical dimensions of photoresist patterns in 3 dimensions, but it is generally limited by the ability to fully resolve deep and narrow structures, can be destructive and suffer from low throughput. Here, we show validation of a novel fully automated in-line AFM system, QUADRA, that overcomes these challenges. Details relevant for use in HVM are reported on line and space EUV photoresist patterns after development (ADI).

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Nelda Antonovaité, ShihWei Yu, Khalid Elsayed, Erik Simons, Hokyun Chin, Arseniy Kalinin, Irene Battisti, Helda Pahlavani, Seokhan Kim, Artem Khachaturiants, Niranjan Saikumar, Rudolf Wilhelm, and Hamed Sadeghian "Validation of non-destructive 3D probe-based metrology for EUV lithography", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 1295531 (10 April 2024); https://doi.org/10.1117/12.3010719

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