We introduce a metal infiltration technique to improve lithographic pattern fidelity. By applying vaporized metal-containing gas, metal was infiltrated into a chemically amplified resist (CAR) to alter the etching resistivity. Interestingly, the altered CAR exhibited both metal and organic properties, exhibiting etch selectivity to spin-on-glass and spin on carbon, respectively. We explored the properties of metal-infiltrated CAR and used them to improve pattern fidelity. For example, hole pattern could be transferred more rectangularly. In addition, we investigated whether hole shrink could be realized by volume expansion.
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