Paper
25 January 2024 GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping
Yiman Xu, Hanyu Liu, Wenhao Li, Hanlin Li, Jun Wang
Author Affiliations +
Abstract
In this paper, we present the design and simulation of a GaN-based back-illuminated ultraviolet (UV) photodetector with an absorption layer compensation doping. In the conventional UV detector, the absorption layer typically exhibits a high background doping concentration (ranging from 1.0×1015 to 1.0×1017 cm-3), which unintentionally introduces carriers that impact the electric field distribution within the absorption layer. Consequently, the electric field near the N electrode is diminished. In the back-illumination operating mode, a substantial amount of the incident light is absorbed by the absorption layer positioned near the N electrode. This is primarily attributed to the high absorption coefficient of the AlGaN material. Consequently, the lower electric field in this region hinders the prompt conversion of the photogenerated carriers into signals. This design improves the performance of the UV photodetector by simulating the implementation of compensatory doping in the absorber layer. This helps to reduce the impact of background doping concentration. After optimization, at the peak detection wavelength of 360 nm, the compensated doped PD exhibited an unbiased peak responsivity of 0.15 A/W, as determined by spectral response simulation work.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Yiman Xu, Hanyu Liu, Wenhao Li, Hanlin Li, and Jun Wang "GaN-based back-illuminated ultraviolet photodetector with an absorption layer compensation doping", Proc. SPIE 12972, International Academic Conference on Optics and Photonics (IACOP 2023), 129720K (25 January 2024); https://doi.org/10.1117/12.3022612
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KEYWORDS
Ultraviolet radiation

Photodetectors

Light absorption

Doping

Absorption

Electric fields

Spectral response

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