Paper
1 April 1991 High-performance InGaAs PIN and APD (avalanche photdiode) detectors for 1.54 um eyesafe rangefinding
Gregory H. Olsen, Donald A. Ackley, J. Hladky, James Spadafora, K. M. Woodruff, M. Kazakia, Brian T. Van Orsdel, Stephen R. Forrest, Yue Liu
Author Affiliations +
Proceedings Volume 1419, Eyesafe Lasers: Components, Systems, and Applications; (1991) https://doi.org/10.1117/12.43843
Event: Optics, Electro-Optics, and Laser Applications in Science and Engineering, 1991, Los Angeles, CA, United States
Abstract
The structure and device properties of indium gallium arsenide (InGaAs) pin photodiodes and avalanche photodiodes (APDs) are described. Quantum efficiencies above 85% at 1.54 micrometers , dark current densities near 1 (mu) A/cm2 (-5 V, 300 K) and 3 mm diameter shunt resistances (10 mV, 300 K) above 10 megohms have been observed. Avalanche gains above 20 have been measured with multiplied primary dark currents below 7 nA. Extended wavelength InxGa1-xAs (.53 < x < .80) pin detectors are also described with 70% quantum efficiency and room temperature RoA products above 2000 ohm -cm2 at 1.8 micrometers , 900 ohm -cm2 at 2.1 micrometers and 15 ohm -cm2 at 2.6 micrometers .
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory H. Olsen, Donald A. Ackley, J. Hladky, James Spadafora, K. M. Woodruff, M. Kazakia, Brian T. Van Orsdel, Stephen R. Forrest, and Yue Liu "High-performance InGaAs PIN and APD (avalanche photdiode) detectors for 1.54 um eyesafe rangefinding", Proc. SPIE 1419, Eyesafe Lasers: Components, Systems, and Applications, (1 April 1991); https://doi.org/10.1117/12.43843
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KEYWORDS
Indium gallium arsenide

Sensors

Avalanche photodetectors

Quantum efficiency

Diffusion

Germanium

Laser systems engineering

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