High-performance AlGaAs/GaAs HBT IC technology

S. Jayasimha Prasad; B. Vetanen; C. Haynes; S. Park; I. Beers; Scott Diamond; G. A. Pubanz; John T. Ebner; S. Sanielevici; Agoston Agoston

doi:10.1117/12.137709

3 September 1992 High-performance AlGaAs/GaAs HBT IC technology

S. Jayasimha Prasad, B. Vetanen, C. Haynes, S. Park, I. Beers, Scott Diamond, G. A. Pubanz, John T. Ebner, S. Sanielevici, Agoston Agoston

Author Affiliations +

Proceedings Volume 1680, High-Speed Electronics and Optoelectronics; (1992) https://doi.org/10.1117/12.137709
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

A high-performance AlGaAs/GaAs HBTIC technology capable of 45 GHz f_T and f_max is described. The process is mesa isolated and does not use any ion-implantation steps. This simple non-self-aligned process integrates 1.4 THz Schottky diodes, nichrome resistors, MIM capacitors and air-bridge inductors. An HBT divide-by-eight prescaler circuit clocks at 13.5 GHz. A pulser circuit using the fast Schottky diodes produced a voltage pulse having 10.35 ps rise time.

Citation Download Citation

S. Jayasimha Prasad, B. Vetanen, C. Haynes, S. Park, I. Beers, Scott Diamond, G. A. Pubanz, John T. Ebner, S. Sanielevici, and Agoston Agoston "High-performance AlGaAs/GaAs HBT IC technology", Proc. SPIE 1680, High-Speed Electronics and Optoelectronics, (3 September 1992); https://doi.org/10.1117/12.137709

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