Improved CD control over topography through process and resist modification

Eitan Shalom

doi:10.1117/12.151102

13 August 1993 Improved CD control over topography through process and resist modification

Eitan Shalom

Proceedings Volume 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine; (1993) https://doi.org/10.1117/12.151102
Event: 8th Meeting in Israel on Optical Engineering, 1992, Tel Aviv, Israel

Abstract

This paper presents our experiments towards improved CD control over 4000A' poly steps using a single layer resist. The techniques used for reduction of CD variation were a special develop process to enhance surface inhibition effect, the use of dye additive and increase of resist thickness. As resist thickness varies over the poly steps it goes through various minima and maxima of the swing curve. This phenomenon causes the line width to vary and forms a challenge to modern lithography as shrinking design rules are more and more demanding, and CD variation due to topography can cause the device to fail. We have looked at the effect of dye additive, a special develop process and choice of thickness on CD control, focus and exposure latitude. The recommended process is chosen based on those parameters and presents the best achievable results with single layer resist. The geometries we investigated were 0.5 and 0.6 Micron showing that an acceptable process window for those geometries is achievable under a production environment.

Citation Download Citation

Eitan Shalom "Improved CD control over topography through process and resist modification", Proc. SPIE 1972, 8th Meeting on Optical Engineering in Israel: Optoelectronics and Applications in Industry and Medicine, (13 August 1993); https://doi.org/10.1117/12.151102

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KEYWORDS

Photoresist processing

Critical dimension metrology

Absorption

Image processing

Reflectivity

Scanning electron microscopy

Skin

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