Surface-doped sillenite crystals for integrated optics

Valeri A. Voznesensky; George S. Svechnikov

doi:10.1117/12.165423

10 December 1993 Surface-doped sillenite crystals for integrated optics

Valeri A. Voznesensky, George S. Svechnikov

Proceedings Volume 2108, International Conference on Holography, Correlation Optics, and Recording Materials; (1993) https://doi.org/10.1117/12.165423
Event: Holography, Correlation Optics, and Recording Materials, 1993, Chernivsti, Ukraine

Abstract

A diffusion technique for the fabrication of waveguide structures in Bi₁₂GeO₂₀,Bi₁₂SiO₂₀ crystals is described. The infrared reflection spectroscopy for the different waveguides thickness has been used to clarify the diffusion mechanism. Reflection spectra of the crystals with different thicknesses of doped layer shows that doping ions formed a chemical bond with oxygen in the tetrahedral environment. In this case doping ions replace Ge, Bi, an Si ions in the crystals unit. Integrated optic waveguides with losses no higher than 1.5 - 2.0 dB/cm for near IR wavelength operation have been successfully formed.

Citation Download Citation

Valeri A. Voznesensky and George S. Svechnikov "Surface-doped sillenite crystals for integrated optics", Proc. SPIE 2108, International Conference on Holography, Correlation Optics, and Recording Materials, (10 December 1993); https://doi.org/10.1117/12.165423

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