Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: a leaky barrier

D. S. Kim

doi:10.1117/12.2316045

1 September 1996 Thick Al_xGa_1-xAs in GaAs/Al_xGa_1-xAs quantum wells: a leaky barrier

D. S. Kim

Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 27789W (1996) https://doi.org/10.1117/12.2316045
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of

Abstract

The anomalously large Stokes and anti-Stokes real space charge transfer over thick barriers in GaAs/Al_xGa_1-xAs asymmetric double quantum wells (ADQW) in low temperature and low excitation limits has remained unsolved [1]. Here, we conclusively identify the inhomogeneity of the alloy barrier potential as the source of the Stokes transfer.

Citation Download Citation

D. S. Kim "Thick Al_xGa_1-xAs in GaAs/Al_xGa_1-xAs quantum wells: a leaky barrier", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27789W (1 September 1996); https://doi.org/10.1117/12.2316045

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