Simulation and testing of a vertical organometallic vapor phase epitaxy reactor

R. A. Sani; M. Barmawi; J. Y. Mindara

doi:10.1117/12.300675

20 February 1998 Simulation and testing of a vertical organometallic vapor phase epitaxy reactor

R. A. Sani, M. Barmawi, J. Y. Mindara

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300675
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

The purpose of the study is to design a single wafer vertical organo-metallic vapor phase epitaxy (OMVPE) reactor which gives a uniform deposition around the symmetry axis. The vertical reactor under the consideration consist of a diffuser and a system of coaxial cylinders to laminarize the flow which may lead to a uniform deposition without rotating the susceptor. The simulation shows that for a susceptor with a radius of 2.5 cm, a uniformity can be achieved in a region of a radius of 2 cm within 1% for certain operating condition. The result is compared with the experimental measurement of TiO₂ deposition from TTIP.

Citation Download Citation

R. A. Sani, M. Barmawi, and J. Y. Mindara "Simulation and testing of a vertical organometallic vapor phase epitaxy reactor", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300675

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