InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates

Gary M. Smith; Karim S. Boutros; J. W. Szewczuk; J. S. Flynn; V. M. Phanse; Robert P. Vaudo; Joan Marie Redwing

doi:10.1117/12.304424

7 April 1998 InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates

Gary M. Smith, Karim S. Boutros, J. W. Szewczuk, J. S. Flynn, V. M. Phanse, Robert P. Vaudo, Joan Marie Redwing

Proceedings Volume 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II; (1998) https://doi.org/10.1117/12.304424
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN- on-sapphire substrates. These substrates consisted of a thick HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.

Citation Download Citation

Gary M. Smith, Karim S. Boutros, J. W. Szewczuk, J. S. Flynn, V. M. Phanse, Robert P. Vaudo, and Joan Marie Redwing "InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); https://doi.org/10.1117/12.304424

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