E-beam and deep-UV exposure of PMMA-based resists: identical or different chemical behavior?

A. Uhl; Juergen Bendig; J. Leistner; Ulrich A. Jagdhold; Joachim J. Bauer

doi:10.1117/12.312404

29 June 1998 E-beam and deep-UV exposure of PMMA-based resists: identical or different chemical behavior?

A. Uhl, Juergen Bendig, J. Leistner, Ulrich A. Jagdhold, Joachim J. Bauer

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312404
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The chemical reactions and the dissolution properties of homopolymeric PMMA and a P(MMA-co-MAA) copolymer were investigated during DUV (KrF, 248 nm) and e-beam exposure. The chain scission reaction was analyzed using GPC. The polymer degradation reaction is very similar at both exposure procedures. In both cases a bimodal and, later, a multimodal character of the molecular weight distribution is observed.

Citation Download Citation

A. Uhl, Juergen Bendig, J. Leistner, Ulrich A. Jagdhold, and Joachim J. Bauer "E-beam and deep-UV exposure of PMMA-based resists: identical or different chemical behavior?", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312404

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