Paper
2 July 1998 Deposition of carbon nitride thin films by IR-laser-induced reactions in carbon-nitrogen gas-phase compounds
Aurelian Crunteanu, Rodica Alexandrescu, Raluca Cireasa, S. Cojocaru, Ion G. Morjan, A. Andrei, Ashock Kumar
Author Affiliations +
Proceedings Volume 3405, ROMOPTO '97: Fifth Conference on Optics; (1998) https://doi.org/10.1117/12.312751
Event: ROMOPTO '97: Fifth Conference on Optics, 1997, Bucharest, Romania
Abstract
Since the theoretical studies of Liu and Cohen who predicted the existence of a superhard phase of carbon nitride, a great deal of effort was underdone in order to synthesize this hypothetical material with a nitrogen content as high as the 57% present in a (beta) -C3N4 structure. This study presents an attempt to produce CNx thin films using the laser-induced CVD technique. CW CO2 laser was used for irradiating various carbon-nitrogen containing mixtures such as C2H4/N2O/NH3. The CNx films were grown alternatively on bare alumina ((alpha) - Al2O3) substrates and on pre-deposited Ti films. A comparative analysis of nitrogen incorporation in the films obtained in different experimental conditions was performed by means of the X-ray photoelectron spectroscopy. The same method was used to identify the chemical states of the CN system.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aurelian Crunteanu, Rodica Alexandrescu, Raluca Cireasa, S. Cojocaru, Ion G. Morjan, A. Andrei, and Ashock Kumar "Deposition of carbon nitride thin films by IR-laser-induced reactions in carbon-nitrogen gas-phase compounds", Proc. SPIE 3405, ROMOPTO '97: Fifth Conference on Optics, (2 July 1998); https://doi.org/10.1117/12.312751
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KEYWORDS
Titanium

Carbon

Nitrogen

Thin films

Carbon dioxide lasers

Nickel

Chemical analysis

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