Thermalization process in sputtering systems by atomic absorption spectroscopy

Edward Augustyniak; Serguei V. Filimonov; Chih-shun Lu

doi:10.1117/12.324341

3 September 1998 Thermalization process in sputtering systems by atomic absorption spectroscopy

Edward Augustyniak, Serguei V. Filimonov, Chih-shun Lu

Proceedings Volume 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV; (1998) https://doi.org/10.1117/12.324341
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Atomic absorption (AA) spectroscopy was applied to study thermalization of neutral atomic species in a dc magnetron sputtering system. Resonance absorption by Ti atoms was measured with a hollow cathode lamp based AA monitor. Absorption versus deposition rate curves for Ti were obtained at different pressures, ranging from 2 to 38 mTorr, using a quartz crystal microbalance for mass measurements. To study the thermalization of sputtered atoms as a function of distance from the target, the probing beam was positioned at different locations. Experimental data were collected on the influence of argon pressure, sputtering power, and chamber geometry on the absorption signal. The thermalized atoms were found to play a dominant role in determining the sensitivity of AA monitor. Comparisons were also made between the sensitivities of AA monitor for sputtering and thermal evaporation processes. The feasibility of using a tunable diode laser to measure the absorption line profile was established and demonstrated on Zr sputtering process. We found the AA monitor to be a powerful tool for studying sputtering. With proper procedures, the AA monitor can also be used for real-time control of deposition rate in sputtering processes.

Citation Download Citation

Edward Augustyniak, Serguei V. Filimonov, and Chih-shun Lu "Thermalization process in sputtering systems by atomic absorption spectroscopy", Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); https://doi.org/10.1117/12.324341

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available