Photoresist silylation and "swelling": simulation using finite element analysis and physical boundary movement algorithms

Arousian Arshak; Thomas J. Kinsella; Declan McDonagh

doi:10.1117/12.350229

11 June 1999 Photoresist silylation and "swelling": simulation using finite element analysis and physical boundary movement algorithms

Arousian Arshak, Thomas J. Kinsella, Declan McDonagh

Author Affiliations +

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350229
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

In this work, a new resist silylation simulator called STIL has been developed. This simulator models the silylation process as a 1D Initial Boundary Value problem which is then solved using in-house developed Finite Element Analysis code. In this model, the silylating agent diffusion and reaction rates are recalculate dafter each silylating time- step, (delta) t. The swelling mechanism is modeled as a Boundary Movement problem whereby the swelling in each element is a function of the local silicon concentration in that element. By solution of this system across the exposed area, a 2D profile of the silicon concentration is determined over an exposed linewidth. the simulations from this model are compared to published experimental data.

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Arousian Arshak, Thomas J. Kinsella, and Declan McDonagh "Photoresist silylation and "swelling": simulation using finite element analysis and physical boundary movement algorithms", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350229

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