Paper
3 February 2000 Modified fused silica for 157-nm mask substrates
Bruno Uebbing, Jan Vydra, Stephan Thomas, Ralf Takke
Author Affiliations +
Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377111
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany
Abstract
The 1999 SIA roadmap predicts a severe acceleration of the reduction of feature sizes down to 100 nm in 2003 and further down to 70 nm in 2005, respectively. One of the most promising candidates to achieve this demanding goal is the 157 nm optical microlithography. But today there are still many uncertainties whether this technology will be ready in time for the semiconductor industry. The material for the mask substrates, for example is regarded as one of the potential showstoppers for this generation of optical microlithography. For present generations of optical microlithography (i-line, DUV and 193 nm) fused silica is the material of choice for mask substrates. Its superior mechanical, thermal and optical properties make it an ideal substrate material.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno Uebbing, Jan Vydra, Stephan Thomas, and Ralf Takke "Modified fused silica for 157-nm mask substrates", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); https://doi.org/10.1117/12.377111
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KEYWORDS
Silica

Photomasks

Absorption

Optical lithography

Magnesium fluoride

Refractive index

Fluorine

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