New concept technology: pressure-variation liquid phase epitaxy

XiangJun Mao; Yuen Chuen Chan; Yee Loy Lam; JingYi Zhu; YunXi Shi

doi:10.1117/12.392141

11 July 2000 New concept technology: pressure-variation liquid phase epitaxy

XiangJun Mao, Yuen Chuen Chan, Yee Loy Lam, JingYi Zhu, YunXi Shi

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392141
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

Liquid phase epitaxy (LPE) is an important technique to grow GaSb-based materials of good crystal quality. Normally, one has to lower the growth temperature below the liquid-phase liquidus temperature to realize supercooling of the liquid phase. Here we bring forth a new type of LPE, pressure- variation LPE (PV-LPE), where a varying pressure is used to realize supercooling of the liquid phase even though the growth temperature is kept constant. Calculations show that there exists a simple relationship between the liquid content and pressure, which theoretically illustrates that crystal growth could be easily controlled by changing the pressure.

Citation Download Citation

XiangJun Mao, Yuen Chuen Chan, Yee Loy Lam, JingYi Zhu, and YunXi Shi "New concept technology: pressure-variation liquid phase epitaxy", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392141

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