Influence of annealing conditions on the chemical states of InP/SiO2 nanocomposite films deposited by rf magnetron co-sputtering

Ruiqin Ding; Guorong Zhou; Hao Wang; Huidong Yang; Lin Hu

doi:10.1117/12.408434

29 November 2000 Influence of annealing conditions on the chemical states of InP/SiO₂nanocomposite films deposited by rf magnetron co-sputtering

Ruiqin Ding, Guorong Zhou, Hao Wang, Huidong Yang, Lin Hu

Author Affiliations +

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408434
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Indium phosphide/silica composite thin films have been fabricated on water-cooled substrates and heated substrates respectively by radio frequency magnetron cosputtering technique. X ray diffraction patterns and optical absorption and photoluminescence spectra at room temperature strongly suggest that InP nanocrystals exist in the SiO₂ matrices of the films deposited on water-cooled substrates after annealing and of the films deposited on heated substrates. X-ray photoelectron spectra show that there are quite a log of oxides of In and P and quite many oxygen deficiencies of SiO₂ in the films deposited on water-cooled substrates, but there are few deficiencies of SiO₂ and much less oxides of In and P in the films deposited on heated substrates. The component of InP increases and the oxides of In and P and oxygen deficiencies in SiO₂ diminish at a large extent under suitable annealing temperature and time in a high vacuum system, but the role of annealing is limited because of the escape of P. The problem can be solved quite well by coating a SiO₂ layer on the surfaces of the films before annealing and then annealing the films in H₂ of 10³ Pa.

Citation Download Citation

Ruiqin Ding, Guorong Zhou, Hao Wang, Huidong Yang, and Lin Hu "Influence of annealing conditions on the chemical states of InP/SiO₂nanocomposite films deposited by rf magnetron co-sputtering", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408434

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available