Paper
12 June 2001 Quantum well infrared detection devices
Hui Chun Liu, Chunying Song, Aidong Shen, Richard Dudek, Ming Gao, Emmanuel Dupont, Zbigniew R. Wasilewski, Margaret Buchanan, P. H. Wilson, Brad J. Robinson, David A. Thompson, Gail J. Brown, Frank Szmulowicz, James E. Ehret
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Abstract
Quantum wells, especially those made of GaAs and InP related compounds, have enabled several unique infrared devices. Two prime examples are quantum well infrared photodetectors (QWIP) and quantum cascade lasers. This paper discusses a few examples of QWIP related devices: (1) QWIPs are well suited for high speed and high frequency applications--work on achieving high absorption efficiency and high operating temperature has been carried out. (2) A variation of conventional QWIP structures can lead to simultaneous visible and infrared detection, and demonstrations using both GaAs and InP based structures have been made. (3) P- type structures may achieve competitive performance and lend to easy fabricating of large focal plane arrays, and good performance has been achieved in resonant-cavity enhanced p- QWIPs.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hui Chun Liu, Chunying Song, Aidong Shen, Richard Dudek, Ming Gao, Emmanuel Dupont, Zbigniew R. Wasilewski, Margaret Buchanan, P. H. Wilson, Brad J. Robinson, David A. Thompson, Gail J. Brown, Frank Szmulowicz, and James E. Ehret "Quantum well infrared detection devices", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429401
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KEYWORDS
Quantum well infrared photodetectors

Absorption

Quantum wells

Gallium arsenide

Doping

Visible radiation

Quantum efficiency

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