Paper
11 July 2001 Influence of target temperature on crystallization and properties of NiTi thin film shape memory alloy
Author Affiliations +
Abstract
A new process parameter viz.; target temperature, has been introduced to decrease the composition variables between the target and substrate. A DC magnetron sputtering system has been used for the deposition of NiTi film from equiatomic NiTi target on silicon substrate. The target transitions from a low temperature value to a high temperature value (>700 degree(s)C) during sputtering. The sputtered films were crystallized by heating to 500 degree(s)C for 10 minutes in situ prior to removal from the sputtering system. X-ray diffractogram shows that the film peaks correspond to martensite as well as austenite phases. The film developed under this process displays the two-way shape memory effect without post annealing. Electrical resistivity measurement reveals that there are three different phases present viz.; austenite, rhombohedral and martensite, which exists at different temperature ranges. The characteristic transformation temperatures determined by the electrical resistivity method are compared with those obtained with DSC thermograms.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kotekar Panduranga Mohanchandra, Ken K. Ho, and Gregory Paul Carman "Influence of target temperature on crystallization and properties of NiTi thin film shape memory alloy", Proc. SPIE 4333, Smart Structures and Materials 2001: Active Materials: Behavior and Mechanics, (11 July 2001); https://doi.org/10.1117/12.432783
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sputter deposition

Crystals

Temperature metrology

Thin films

Titanium

X-ray diffraction

X-rays

Back to Top