Photovoltaic detectors based on porous silicon heterostructures

Liubomyr S. Monastyrskii; Volodymyr P. Savchyn; Vira B. Kytsay; Petro P. Parandii

doi:10.1117/12.425454

17 April 2001 Photovoltaic detectors based on porous silicon heterostructures

Liubomyr S. Monastyrskii, Volodymyr P. Savchyn, Vira B. Kytsay, Petro P. Parandii

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425454
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

Photosensitivity of single and double heterostructures based on porous silicon was investigated. A number of double heterostructures were created by formation of the optical contacts on porSi/Si heterostructures and GeSe single crystal thin plate (d approximately 20micrometers ). Wide band photovoltaic sensitivity from 0.4 to 1.2 micrometers was observed for different heterostructures. The behavior of experimental curves was explained using energy band configuration. GaSe/porSi/Si heterostructures were also highly sensitive to mechanical stresses. It was concluded that heterostructures based on GaSe/porSi/Si plates might find their application as wide-band photo converters and tenzosensitive devices.

Citation Download Citation

Liubomyr S. Monastyrskii, Volodymyr P. Savchyn, Vira B. Kytsay, and Petro P. Parandii "Photovoltaic detectors based on porous silicon heterostructures", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425454

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