Open Access Paper
21 April 2003 High-bandwidth low-latency global interconnect
Christer M Svensson, Peter Caputa
Author Affiliations +
Proceedings Volume 5117, VLSI Circuits and Systems; (2003) https://doi.org/10.1117/12.499957
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain
Abstract
Global interconnects have been identified as a serious limitation to chip scaling, due to their limited bandwidth and large delay. A critical analysis of intrinsic limitations of electrical interconnect indicates that these limitations can be overcome. This basic analysis is presented, together with design constraints. We demonstrate a scheme for this, based on the utilization of upper-level metals as transmission lines. A global communication architecture based on a global mesochronous, local synchronous approach allows very high data-rate per wire and therefore very high bandwidth in buses of limited width. As an example, we demonstrate a 320μm wide bus with a capacity of 160Gb/s in a nearly standard 0.18μm process.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christer M Svensson and Peter Caputa "High-bandwidth low-latency global interconnect", Proc. SPIE 5117, VLSI Circuits and Systems, (21 April 2003); https://doi.org/10.1117/12.499957
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Cited by 6 scholarly publications.
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KEYWORDS
Metals

Skin

Network on a chip

Signal attenuation

Clocks

Dielectrics

Performance modeling

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