Formation process of Si nanoparticles deposited by pulse laser ablation

Yinglong Wang; Rongmei Zhang; Guangsheng Fu; Yingcai Peng; Li Han; Lizhi Chu

doi:10.1117/12.523004

12 May 2004 Formation process of Si nanoparticles deposited by pulse laser ablation

Yinglong Wang, Rongmei Zhang, Guangsheng Fu, Yingcai Peng, Li Han, Lizhi Chu

Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.523004
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China

Abstract

The deposited dynamic process of Si nanoparticles prepared by pulsed laser ablation is numerically simulated by using the direct simulation Monte Carlo method. It is found that there is a mixed region where the high-density Si vapor peak and the gas peak are overlapped. The Si nanoparticles are formed by Si vapor condensation in the region and their sizes depend on the properties of the region such as density and range. The properties of the mixed region are changed constantly when its position are oscillated with time is increased, and get to stable state at certain a time, i.e., oscillating time. The oscillating time determines the distribution of nanoparticles in size. The influence of the experimental parameters on oscillating time of the mixed region is analyzed theoretically. The results show that the Si-based nanostructure materials with more uniform nanoparticles in size can be obtained by using appropriate proportion of He and Ar as ambient gas.

Citation Download Citation

Yinglong Wang, Rongmei Zhang, Guangsheng Fu, Yingcai Peng, Li Han, and Lizhi Chu "Formation process of Si nanoparticles deposited by pulse laser ablation", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.523004

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