Paper
10 January 2005 Improving low-temperature performance of infrared thin-film interference filters utilizing temperature dependence of refractive index of Pb1-xGexTe
Bin Li, Suying Zhang, Ping Xie, L. Zhang, Dingquan Liu, Fengshan Zhang
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Abstract
Pb1-xGexTe is a pseudobinary alloy of IV-VI narrow-gap semiconductor PbTe and GeTe, of which maximum refractive index corresponds to the ferroelectric phase transition. Since the temperature coefficient of refractive index can be tunable from negative to positive by changing the Ge composition, it is possible to utilize the intrinsic property in the fabrication of infrared thin-film interference filters. A simple Fabry-Perot type narrow-bandpass filter was fabricated, in which Pb0.94Ge0.06Te was substituted for PbTe. It was found that the low-temperature stability of the filter is obviously improved: in the temperature range of 80-300 K, the shift of center wavelength with temperature is reduced from 0.48 nm.K-1 to 0.23 nm.K-1; furthermore, the peak transmittance of filter fabricated with Pb0.94Ge0.06Te is ~3% over that fabricated with PbTe.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bin Li, Suying Zhang, Ping Xie, L. Zhang, Dingquan Liu, and Fengshan Zhang "Improving low-temperature performance of infrared thin-film interference filters utilizing temperature dependence of refractive index of Pb1-xGexTe", Proc. SPIE 5640, Infrared Components and Their Applications, (10 January 2005); https://doi.org/10.1117/12.570365
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KEYWORDS
Germanium

Lead

Thin films

Tellurium

Refractive index

Infrared radiation

Temperature metrology

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